Mechanism of surface smoothing of diamond by a hydrogen plasma

被引:52
作者
Rawles, RE
Komarov, SF
Gat, R
Morris, WG
Hudson, JB
DEvelyn, MP
机构
[1] RENSSELAER POLYTECH INST,DEPT MAT SCI & ENGN,TROY,NY 12180
[2] ASTEX INC,APPL SCI & TECHNOL,WOBURN,MA 01801
[3] GE CO,CORP RES & DEV,SCHENECTADY,NY 12301
关键词
diamond; plasma; hydrogen; diffusion (surface);
D O I
10.1016/S0925-9635(96)00623-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
As-polished diamond (100)- and (111)-oriented single crystals and natural diamond powders of 0.12-25 mu m diameter were treated in atomic hydrogen generated by a microwave plasma or by a hot tungsten filament. Post-treatment atomic force microscopy (AFM) showed smoothing and step bunching on (100) and (111) surfaces. Natural diamond powders, which were quite irregular and rough prior to treatment, remained the same size but became markedly smoother and well-faceted, as observed by scanning electron microscopy (SEM). The degree of faceting was sensitive to plasma power level or filament temperature and substrate temperature but was independent of H-2 flow rate. The size and degree of faceting appeared to be the same after plasma treatment for isolated and closely packed particles. We argue that surface diffusion is the dominant smoothing mechanism, but clear evidence of etching was observed at substrate temperatures of 975 degrees C and above. (C) 1997 Elsevier Science S.A.
引用
收藏
页码:791 / 795
页数:5
相关论文
共 26 条
[1]  
*APPL SCI TECHN IN, PDS18 MICR PLASM REA
[2]   SURFACE VIEWS OF POLYCRYSTALLINE DIAMOND FILMS - MICROTWINS AND FLAT FACES, CONSTRICTED AND FREE ATOMIC LAYER MOTION [J].
BUSMANN, HG ;
ZIMMERMANNEDLING, W ;
SPRANG, H ;
GUNTHERODT, HJ ;
HERTEL, IV .
DIAMOND AND RELATED MATERIALS, 1992, 1 (09) :979-988
[3]   INFRARED-SPECTROSCOPY AND VIBRATIONAL-RELAXATION OF CHX-STRETCHES AND CDX-STRETCHES ON SYNTHETIC DIAMOND NANOCRYSTAL SURFACES [J].
CHANG, HC ;
LIN, JC ;
WU, JY ;
CHEN, KH .
JOURNAL OF PHYSICAL CHEMISTRY, 1995, 99 (28) :11081-11088
[4]  
Couto M. S., 1994, Journal of Hard Materials, V5, P31
[5]   DIAMOND POLISHING MECHANISMS - AN INVESTIGATION BY SCANNING-TUNNELING-MICROSCOPY [J].
COUTO, MS ;
VANENCKEVORT, WJP ;
SEAL, M .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1994, 69 (04) :621-641
[6]  
DEVELYN MP, 1994, MATER RES SOC SYMP P, V339, P89, DOI 10.1557/PROC-339-89
[7]   AN ATOMISTIC MODEL FOR STEPPED DIAMOND GROWTH [J].
FRENKLACH, M ;
SKOKOV, S ;
WEINER, B .
NATURE, 1994, 372 (6506) :535-537
[8]   GROWTH ON THE RECONSTRUCTED DIAMOND (100) SURFACE [J].
HARRIS, SJ ;
GOODWIN, DG .
JOURNAL OF PHYSICAL CHEMISTRY, 1993, 97 (01) :23-28
[9]   Stepped growth and etching of (001)diamond [J].
Hayashi, K ;
Yamanaka, S ;
Okushi, H ;
Kajimura, K .
DIAMOND AND RELATED MATERIALS, 1996, 5 (09) :1002-1005
[10]   EFFECT OF ATOMIC-HYDROGEN ON THE SURFACE-TOPOGRAPHY OF CHEMICALLY VAPOR-DEPOSITED DIAMOND FILMS - AN ATOMIC-FORCE MICROSCOPY STUDY [J].
JOHANSSON, E ;
CARLSSON, JO .
DIAMOND AND RELATED MATERIALS, 1995, 4 (02) :155-163