Ion-sensitive field-effect transistors fabricated in a commercial CMOS technology

被引:258
作者
Bausells, J
Carrabina, J
Errachid, A
Merlos, A
机构
[1] CSIC, IMB, Ctr Nacl Microelect, Barcelona 08193, Spain
[2] Univ Autonoma Barcelona, Dept Informat, Unitat Microelect, Bellaterra 08193, Spain
关键词
ion-sensitive field-effect transistors; CMOS sensors; silicon oxynitride;
D O I
10.1016/S0925-4005(99)00135-5
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
The fabrication of pH-sensitive ISFET devices in an unmodified two-metal commercial CMOS technology (1.0 m from Atmel-ES2) is reported. The ISFET devices have a gate structure compatible with the CMOS process, with an electrically floating electrode consisting on polysilicon plus the two metals. The passivation oxynitride layer acts as the pH-sensitive material in contact with the liquid solution. The devices have shown good operating characteristics, with a 47 mV/pH response. The use of a commercial CMOS process allows the straightforward integration of signal-processing circuitry. An ISFET amplifier circuit has been integrated with the ISFET sensors. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:56 / 62
页数:7
相关论文
共 16 条
[1]  
BAUSELLS J, 1996, SPIE, V2882, P307
[3]   THE OPERATION OF AN ISFET AS AN ELECTRONIC DEVICE [J].
BERGVELD, P .
SENSORS AND ACTUATORS, 1981, 1 (01) :17-29
[4]   A PROCESS FOR THE COMBINED FABRICATION OF ION SENSORS AND CMOS CIRCUITS [J].
BOUSSE, L ;
SHOTT, J ;
MEINDL, JD .
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (01) :44-46
[5]   Multilayer ISFET membranes for microsystems applications [J].
Cane, C ;
Gotz, A ;
Merlos, A ;
Gracia, I ;
Errachid, A ;
Losantos, P ;
LoraTamayo, E .
SENSORS AND ACTUATORS B-CHEMICAL, 1996, 35 (1-3) :136-140
[6]   STUDY OF PECVD SILICON OXYNITRIDE THIN-LAYERS AS ISFET SENSITIVE INSULATOR SURFACE FOR PH DETECTION [J].
CROS, Y ;
JAFFREZICRENAULT, N ;
CHOVELON, JM ;
FOMBON, JJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (02) :507-511
[7]   ION-SENSING DEVICES WITH SILICON-NITRIDE AND BOROSILICATE GLASS INSULATORS [J].
HARAME, DL ;
BOUSSE, LJ ;
SHOTT, JD ;
MEINDL, JD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (08) :1700-1707
[8]  
NEUZIL P, 1995, SENSOR ACTUAT B-CHEM, V24, P232, DOI 10.1016/0925-4005(95)85050-3
[9]  
Nicollian E. H., 1982, MOS METAL OXIDE SEMI
[10]   BASIC PROPERTIES OF THE ELECTROLYTE-SIO2-SI SYSTEM - PHYSICAL AND THEORETICAL ASPECTS [J].
SIU, WM ;
COBBOLD, RSC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) :1805-1815