Hydrogen-mediated nitrogen clustering in dilute III-V nitrides

被引：13

作者：

Du, Mao-Hua ^{[1
]}

Limpijumnong, Sukit

Zhang, S. B.

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

[2] Suranaree Univ Technol, Natl Synchrotron Res Ctr, Nakhon Ratchasima, Thailand

[3] Suranaree Univ Technol, Sch Phys, Nakhon Ratchasima, Thailand

来源：

PHYSICAL REVIEW LETTERS | 2006年 / 97卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.97.075503

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

First-principles calculation reveals multi-N clusters to be the ground states for hydrogenated N in dilute III-V nitrides. While hydrogenation of a single N, forming H(2)*(N), can relax the large strain induced by the size-mismatched N, formation of the clusters will relax the strain even more effectively. This suppresses the formation of H(2)*(N), the existence of which has recently been debated. More importantly, postgrowth dehydrogenation of the N-H clusters provides an explanation to the observed metastable bare N clusters in GaAsN grown by gas-source molecular beam epitaxy or metal-organic chemical vapor deposition.

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页数：4

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