Inverted bulk-heterojunction organic photovoltaic device using a solution-derived ZnO underlayer

被引:734
作者
White, M. S. [1 ]
Olson, D. C.
Shaheen, S. E.
Kopidakis, N.
Ginley, D. S.
机构
[1] Univ Colorado, Dept Phys, Boulder, CO 80309 USA
[2] Sandia Natl Labs, Albuquerque, NM 87185 USA
[3] Natl Renewable Energy Lab, Golden, CO 80401 USA
关键词
EFFICIENCY; OXIDE;
D O I
10.1063/1.2359579
中图分类号
O59 [应用物理学];
学科分类号
摘要
Inverted organic photovoltaic devices based on a blend of poly(3-hexylthiophene) and a fullerene have been developed by inserting a solution-processed ZnO interlayer between the indium tin oxide (ITO) electrode and the active layer using Ag as a hole-collecting back contact. Efficient electron extraction through the ZnO and hole extraction through the Ag, with minimal loss in open-circuit potential, is observed with a certified power conversion efficiency of 2.58%. The inverted architecture removes the need for the use of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) as an ITO modifier and for the use of a low-work-function metal as the back contact in the device. (c) 2006 American Institute of Physics.
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页数:3
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