A monolithic transformer coupled 5-W silicon power amplifier with 59% PAE at 0.9 GHz

被引：78

作者：

Simbürger, W

Wohlmuth, HD

Weger, P

Heinz, A

机构：

[1] Infineon Technol AG, Corp Res Circuits Dept, D-81730 Munich, Germany

[2] Inst Semicond Phys, D-15230 Frankfurt, Germany

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1999年 / 34卷 / 12期

关键词：

multimode integrated circuit (MMIC); radiofrequency (RF) power amplifiers; silicon;

D O I：

10.1109/4.808913

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the circuit design and application of a monolithically integrated silicon radio-frequency power amplifier for 0.8-1 GHz. The chip is fabricated in a 25-GHz-f(T) silicon bipolar production technology (Siemens B6HF), A maximum output power of 5 W and maximum efficiency of 59% is achieved. The chip is operating from 2.5 to 4.5 V, The linear gain is 36 dB, The balanced two-stage circuit design is based fundamentally on three on-chip transformers. The driver stage and the output stage are connected in common-emitter configuration. The input signal can be applied balanced or single-ended if one input terminal is grounded. One transformer at the input acts as balun as well as input matching network. Two transformers acts as interstage matching network.

引用

页码：1881 / 1892

页数：12

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