Bending and wrinkling as competing relaxation pathways for strained free-hanging films

被引：81

作者：

Cendula, P. ^{[1
,3
]}

Kiravittaya, S. ^{[2
]}

Mei, Y. F. ^{[1
]}

Deneke, Ch. ^{[1
]}

Schmidt, O. G. ^{[1
]}

机构：

[1] IFW Dresden, Inst Integrat Nanosci, D-01069 Dresden, Germany

[2] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

[3] Charles Univ Prague, Fac Math & Phys, DCMP, CR-12116 Prague, Czech Republic

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 08期

关键词：

bending; compressibility; gallium arsenide; III-V semiconductors; indium compounds; multilayers; nanostructured materials; phase diagrams; phase transformations; semiconductor thin films; LAYER; NANOTUBES;

D O I：

10.1103/PhysRevB.79.085429

中图分类号：

T [工业技术];

学科分类号：

120111 [工业工程];

摘要：

An equilibrium phase diagram for the shape of compressively strained free-hanging films is developed by total strain energy minimization. For small strain gradients Delta epsilon, the film wrinkles, while for sufficiently large Delta epsilon, a phase transition from wrinkling to bending occurs. We consider competing relaxation mechanisms for free-hanging films, which have rolled up into tube structures, and we provide an upper limit for the maximum achievable number of tube rotations.

引用

页数：4

共 30 条

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On-chip Si/SiOx microtube refractometer [J].