Fully coupled dynamic electro-thermal simulation

被引：49

作者：

Digele, G ^{[1
]}

Lindenkreuz, S ^{[1
]}

Kasper, E ^{[1
]}

机构：

[1] UNIV STUTTGART,INST SEMICOND ENGN,D-70174 STUTTGART,GERMANY

来源：

IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS | 1997年 / 5卷 / 03期

关键词：

D O I：

10.1109/92.609867

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Fully coupled dynamic electro-thermal simulation on chip and circuit level is presented, Temperature dependent thermal conductivity of silicon is taken into account, thus solving the nonlinear heat diffusion equation, The numerical solution is carried out by using the industry-standard simulator SABER, therefore for electro-thermmal simulations we are able to use the common electrical compact models by adding a heatsource and thermal pins to them, The application of this technique and need for electro-thermmal simulation is illustrated with the simulation of a current control circuit built into a multiwatt package.

引用

页码：250 / 257

页数：8