Maintaining the benefits of CMOS scaling when scaling bogs down

被引:129
作者
Nowak, EJ [1 ]
机构
[1] IBM Corp, Microelect Div, Essex Jct, VT 05452 USA
关键词
D O I
10.1147/rd.462.0169
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
A survey of industry trends from the last two decades of scaling for CMOS logic is examined in an attempt to extrapolate practical directions for CMOS technology as lithography progresses toward the point at which CMOS is limited by the size of the silicon atom itself. Some possible directions for various specialized applications in CMOS logic are explored, and it is further conjectured that double-gate MOSFETs will prove to be the dominant device architecture for this last era of CMOS scaling.
引用
收藏
页码:169 / 180
页数:12
相关论文
共 26 条
[1]  
AJMERA A, 1999, IEEE S VLSI TECHN, P15
[2]  
BERNSTEIN K, 1994, IEEE S VLSI TECHN, P83
[3]  
BRYANT A, 2001, 59 DEV RES C JUN, P22
[4]  
Burr J. B., 1995, 1995 IEEE Symposium on Low Power Electronics. Digest of Technical Papers (Cat. No.95TH8138), P82, DOI 10.1109/LPE.1995.482473
[5]   30nm physical gate length CMOS transistors with 1.0 ps n-MOS and 1.7 ps p-MOS gate delays [J].
Chau, R ;
Kavalieros, J ;
Roberds, B ;
Schenker, R ;
Lionberger, D ;
Barlage, D ;
Doyle, B ;
Arghavani, R ;
Murthy, A ;
Dewey, G .
INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :45-48
[6]  
COX K, 2000, IEEE S VLSI TECHN, P13
[7]  
Cristoloveanu S., 2000, International Journal of High Speed Electronics and Systems, V10, P217, DOI 10.1016/S0129-1564(00)00026-X
[8]   DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J].
DENNARD, RH ;
GAENSSLEN, FH ;
YU, HN ;
RIDEOUT, VL ;
BASSOUS, E ;
LEBLANC, AR .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) :256-268
[9]   A 0.15 μm CMOS foundry technology with 0.1 μm devices for high performance applications [J].
Diaz, CH ;
Chang, M ;
Chen, W ;
Chiang, M ;
Su, H ;
Chang, S ;
Lu, P ;
Hu, C ;
Pan, K ;
Yang, C ;
Chen, L ;
Su, C ;
Wu, C ;
Wang, CH ;
Wang, CC ;
Shih, J ;
Hsieh, H ;
Tao, H ;
Jang, S ;
Yu, M ;
Shue, S ;
Chen, B ;
Chang, T ;
Hou, C ;
Liew, BK ;
Lee, KW ;
Sun, YC .
2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2000, :146-147
[10]   Generalized scale length for two-dimensional effects in MOSFET's [J].
Frank, DJ ;
Taur, Y ;
Wong, HSP .
IEEE ELECTRON DEVICE LETTERS, 1998, 19 (10) :385-387