Current-induced forces in atomic-scale conductors

被引:82
作者
Todorov, TN [1 ]
Hoekstra, J [1 ]
Sutton, AP [1 ]
机构
[1] Univ Oxford, Dept Mat, Oxford OX1 3PH, England
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 2000年 / 80卷 / 03期
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1080/13642810008208601
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a self-consistent tight-binding formalism to calculate the forces on individual atoms due to the flow of electrical current in atomic-scale conductors. Simultaneously with the forces, the method yields the local current density and the local potential in the presence of current flow, allowing a direct comparison between these quantities. The method is applicable to structures of arbitrary atomic geometry and can be used to model current-induced mechanical effects in realistic nanoscale junctions and wires. The formalism is implemented within a simple Is tight-binding model and is applied to two model structures; atomic chains and a nanoscale wire containing a vacancy.
引用
收藏
页码:421 / 455
页数:35
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