Nuclear transmutation doping of 6H-silicon carbide with phosphorous

Aluminium doped 6H-SiC epilayers on a p(+) doped 6H-SiC substrate were irradiated with total neutron doses of 9.4 x 10(19) cm(-2), 3.5 x 10(20) cm(-2), and 6.4 x 10(20) cm(-2) respectively. A donor species is produced by a nuclear reaction involving the decay of Si-31 to P-31. The beta(-) activity after irradiation was measured. The samples were subsequently annealed at a temperature range of between 800 and 1800 degrees C. The annealing behaviour was studied by Low Temperature Photoluminescence (LTPL), Fourier Transform Infrared Spectroscopy (FTIR), Hall-effect, I-V and C-V measurements. The p type 6H-SiC epilayer was transmuted to n-type by an annealing process which resulted in a p-n junction to the p(+) substrate. (C) 1997 Elsevier Science S.A.