DONOR STATES IN TELLURIUM-DOPED SILICON

被引：36

作者：

SCHAUB, R ^{[1
]}

PENSL, G ^{[1
]}

SCHULZ, M ^{[1
]}

HOLM, C ^{[1
]}

机构：

[1] HELIOTRON GMBH,D-8263 BURGHAUSEN,FED REP GER

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1984年 / 34卷 / 04期

关键词：

D O I：

10.1007/BF00616575

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：215 / 222

页数：8

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