ZnO-GaN tunnel junction for transparent ohmic contacts to p-GaN

被引：7

作者：

Kaminska, E

Piotrowska, A

Golaszewska, K

Kruszka, R

Kuchuk, A

Szade, J

Winiarski, A

Jasinski, J

Liliental-Weber, Z

机构：

[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

[2] Silesian Univ, PL-40006 Katowice, Poland

[3] Lawrence Berkeley Natl Lab, Berkeley, CA USA

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2004年 / 371卷 / 1-2期

关键词：

semiconductors; surfaces and interfaces; scanning and transmission microscopy; photoelectron spectroscopies;

D O I：

10.1016/j.jallcom.2003.06.014

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The fabrication procedure of transparent n(+)-ZnO-p-GaN ohmic junctions has been described. The influence of consecutive technological steps on the electrical. structural and electronic properties of the junction has been studied. The results indicate that the predeposition of An nucleation film plays a crucial role for the final contact properties. The ohmic behaviour is explained in terms of formation of a tunnel n(+)-ZnO-p-GaN junction. (C) 2003 Elsevier B.V. All rights reserved.

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页码：129 / 132

页数：4

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