The improvement of electrical properties of Pd-based contact to p-GaN by surface treatment

被引:17
作者
Kim, DW
Bae, JC
Kim, WJ
Baik, HK
Myoung, JM
Lee, SM
机构
[1] Yonsei Univ, Thin Film Mat Lab, Dept Met Engn, Seodaemun Gu, Seoul 120749, South Korea
[2] Yonsei Univ, Informat & Elect Mat Lab, Dept Met Engn, Seodaemun Gu, Seoul 120749, South Korea
[3] Kangweon Natl Univ, Dept Adv Mat Sci & Engn, Chunchon 200701, South Korea
关键词
p-type GaN; Pd ohmic contact; aqua regia treatment; annealing; x-ray photoelectron spectroscopy;
D O I
10.1007/s11664-001-0013-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The surface treatment effect on the interfacial reaction and electrical property of Au/Pd contacts to p-GaN has been investigated. The contact resistance of Au/Pd contacts on boiling aqua regia treated p-GaN was lower than aqua regia treated p-GaN by one order of magnitude. The specific contact resistivity of Au/Pd contacts on boiling aqua regia treated p-GaN increased with annealing temperature, but that on aqua regia treated p-GaN decreased with annealing temperature and it showed minimum value after annealing at 700 degreesC. According to the results of the interfacial reaction, the Au/Pd contact metals reacted more easily with aqua regia treated p-GaN than boiling aqua regia treated p-GaN. Xray photoelectron spectroscopy analysis revealed that the relative surface Ga-to-N ratio of boiling aqua regia treated p-GaN was lower than that of aqua regia treated p-GaN and the surface of p-GaN was modified from Ga-termination to N-termination by surface treatment using boiling aqua regia. According to the results of surface analysis and interfacial reaction of Au/Pd/p-GaN, it could be concluded that the different temperature dependence of contact resistance according to the surface treatment conditions was related strongly to the surface modification of p-GaN from Ga-termination to N-termination.
引用
收藏
页码:183 / 187
页数:5
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