Optical Properties and Band Gap of Single- and Few-Layer MoTe2 Crystals

被引：834

作者：

Ruppert, Claudia

Aslan, Ozgur Burak

Heinz, Tony F. ^{[1
]}

机构：

[1] Columbia Univ, Dept Phys, New York, NY 10027 USA

来源：

NANO LETTERS | 2014年 / 14卷 / 11期

基金：

美国国家科学基金会;

关键词：

Layered materials; transition metal dichalcogenides; 2D materials; MoTe2; electronic and optical properties; TRANSITION-METAL DICHALCOGENIDES; ELECTRONIC-STRUCTURE; RAMAN-SCATTERING; MONOLAYER; IDENTIFICATION; TRANSISTORS; SPECTRUM; STRAIN; MOSE2; MODE;

D O I：

10.1021/nl502557g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Single- and few-layer crystals of exfoliated MoTe2 have been characterized spectroscopically by photoluminescence, Raman scattering, and optical absorption measurements. We find that MoTe2 in the monolayer limit displays strong photoluminescence. On the basis of complementary optical absorption results, we conclude that monolayer MoTe2 is a direct-gap semiconductor with an optical band gap of 1.10 eV. This new monolayer material extends the spectral range of atomically thin direct-gap materials from the visible to the near-infrared.

引用

页码：6231 / 6236

页数：6

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