Quantum Transport Thermometry for Electrons in Graphene

被引：37

作者：

Kechedzhi, K. ^{[1
]}

Horsell, D. W. ^{[2
]}

Tikhonenko, F. V. ^{[2
]}

Savchenko, A. K. ^{[2
]}

Gorbachev, R. V. ^{[2
]}

Lerner, I. V. ^{[3
]}

Fal'ko, V. I. ^{[1
]}

机构：

[1] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

[2] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England

[3] Univ Birmingham, Sch Phys & Astron, Birmingham B15 2TT, W Midlands, England

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 102卷 / 06期

基金：

英国工程与自然科学研究理事会;

关键词：

MAGNETIC-FIELD; FLUCTUATIONS; RELAXATION;

D O I：

10.1103/PhysRevLett.102.066801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We propose a method of measuring the electron temperature T-e in mesoscopic conductors and demonstrate experimentally its applicability to micron-size graphene devices in the linear-response regime (T-e approximate to T, the bath temperature). The method can be especially useful in case of overheating, T-e > T. It is based on analysis of the correlation function of mesoscopic conductance fluctuations. Although the fluctuation amplitude strongly depends on the details of electron scattering in graphene, we show that T-e extracted from the correlation function is insensitive to these details.

引用

页数：4

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