Ultra-dense hydrogen silsesquioxane (HSQ) structures on thin silicon nitride membranes

被引：18

作者：

Choi, Sookyung ^{[2
,3
]}

Yan, Minjun ^{[2
]}

Wang, Liang ^{[2
,3
]}

Adesida, Ilesanmi ^{[1
,2
,3
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

[2] Univ Illinois, Micro & Nanotechnol Lab, Urbana, IL 61801 USA

[3] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA

来源：

MICROELECTRONIC ENGINEERING | 2009年 / 86卷 / 4-6期

关键词：

Electron-beam lithography (EBL); Hydrogen silsesquioxane (HSQ); Scanning transmission electron microscopy (STEM); ELECTRON-BEAM LITHOGRAPHY; HIGH-RESOLUTION; RESIST;

D O I：

10.1016/j.mee.2008.12.055

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultra-dense nanometer-scale gratings (20 nm pitch) on thin silicon nitride (Si3N4) membrane substrates using hydrogen silsesquioxane (HSQ) resist have been fabricated. Scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) were performed to evaluate the pattern quality of the HSQ gratings. The results are compared with HSQ gratings fabricated on silicon substrates. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：521 / 523

页数：3

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