Effects of developer temperature on electron-beam-exposed hydrogen silsesquioxane resist for ultradense silicon nanowire fabrication

被引：21

作者：

Choi, Sookyung ^{[1
,2
,3
]}

Jin, Niu ^{[1
,2
,3
]}

Kumar, Vipan ^{[1
,2
,3
]}

Adesida, Ilesanmi ^{[1
,2
,3
]}

Shannon, Mark ^{[4
]}

机构：

[1] Univ Illinois, Micro & Nanotechnol Lab, Urbana, IL 61801 USA

[2] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

[3] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA

[4] Univ Illinois, Dept Mech & Sci Engn, Urbana, IL 61801 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2007年 / 25卷 / 06期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1116/1.2794315

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of developer temperature on hydrogen silsesquioxane (HSQ) resist for the fabrication of ultradense silicon nanowires are reported. At higher developer temperatures, the contrast of HSQ significantly increased and sharply defined gratings were obtained. In addition, higher developer temperature provided larger processing windows for various grating periodicities. Pattern transfer with HSQ masks using both dry and wet etching processes to fabricate silicon nanowires on silicon-on-insulator substrates is demonstrated. 27-nm-period silicon nanowire arrays obtained using the high temperature development along with the two etching processes are presented and discussed. (c) 2007 American Vacuum Society.

引用

页码：2085 / 2088

页数：4

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