Realization of sub-micron patterns on GaAs using a HSQ etching mask

被引：21

作者：

Lauvernier, D ^{[1
]}

Garidel, S ^{[1
]}

Legrand, C ^{[1
]}

Vilcot, JP ^{[1
]}

机构：

[1] Univ Sci & Technol Lille, UMR 8520, CNRS, Inst Elect Microelect & Nanotechnol, F-59652 Villeneuve Dascq, France

来源：

MICROELECTRONIC ENGINEERING | 2005年 / 77卷 / 3-4期

关键词：

HSQ resist; SiCl4/Ar etching of GaAs; nano-structures; III/V semiconductors;

D O I：

10.1016/j.mee.2004.11.002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hydrogen SilSesQuioxane is now known for its possibilities as negative tone e-beam resist. Good quality patterning can be obtained with low roughness. We report here the transfer of this pattern to a GaAs layer. Our aim is to fabricate nano-photonic structures with the lowest roughness and the most vertical walled profiles by means of GaAs reactive ion etching technique using SiCl4/Ar chemistry. To do so, the etching resistance of the HSQ mask needs to be strenghten and an optimization of the etching step is necessary. (c) 2004 Elsevier B.V. All rights reserved.

引用

收藏

页码：210 / 216

页数：7

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