A simple REFET for pH detection in differential mode

被引:48
作者
Errachid, A
Bausells, J
Jaffrezic-Renault, N
机构
[1] CSIC, IMB, Ctr Nacl Microelect, Barcelona 08193, Spain
[2] Ecole Cent Lyon, CNRS, UMR 5621, IFoS, F-69131 Ecully, France
关键词
REFET; ISFET; ion sensors; differential measurements;
D O I
10.1016/S0925-4005(99)00242-7
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
A simple reference field-effect transistor (REFET) for pH detection in differential mode measurements is described. The device is based on a pH-insensitive polymeric PVC membrane cast on the gate insulator of an ion-sensitive field-effect transistor (ISFET) device, that has been previously silylated. The REFET shows low pH sensitivity (1.8 mV/pH) and is only slightly affected by the concentration of Na+ and K+. The pH response of a combined solid state device consisting on a pH ISFET (of 45 mV/pH sensitivity), the REFET and a quasi-reference electrode (QRE) (Pt) is 43.7 mV/pH from pH 2 to 9. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:43 / 48
页数:6
相关论文
共 23 条
[1]   ISFETS USING INORGANIC GATE THIN-FILMS [J].
ABE, H ;
ESASHI, M ;
MATSUO, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (12) :1939-1944
[3]   HOW ELECTRICAL AND CHEMICAL-REQUIREMENTS FOR REFETS MAY COINCIDE [J].
BERGVELD, P ;
VANDENBERG, A ;
VANDERWAL, PD ;
SKOWRONSKAPTASINSKA, M ;
SUDHOLTER, EJR ;
REINHOUDT, DN .
SENSORS AND ACTUATORS, 1989, 18 (3-4) :309-327
[4]   THE DEVELOPMENT AND APPLICATION OF FET-BASED BIOSENSORS [J].
BERGVELD, P .
BIOSENSORS, 1986, 2 (01) :15-33
[5]   THE OPERATION OF AN ISFET AS AN ELECTRONIC DEVICE [J].
BERGVELD, P .
SENSORS AND ACTUATORS, 1981, 1 (01) :17-29
[6]  
BERGVELD P, 1978, THEORY DESIGN BIOMED, P135
[7]  
CANE C, 1991, P INT C SOL STAT SEN, P225
[8]   FIELD-EFFECT TRANSISTOR AS A SOLID-STATE REFERENCE ELECTRODE [J].
COMTE, PA ;
JANATA, J .
ANALYTICA CHIMICA ACTA, 1978, 101 (02) :247-252
[9]   ION-SENSING DEVICES WITH SILICON-NITRIDE AND BOROSILICATE GLASS INSULATORS [J].
HARAME, DL ;
BOUSSE, LJ ;
SHOTT, JD ;
MEINDL, JD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (08) :1700-1707