Ballistic electron emission microscopy of Au/n-ZnSe contacts and local density of states spectroscopy

被引：6

作者：

Chahboun, A

Coratger, R

Ajustron, F

Beauvillain, J

Dharmadasa, IM

Samantilleke, AP

机构：

[1] CNRS, CEMES, F-31055 Toulouse 4, France

[2] Sheffield Hallam Univ, Mat Res Inst, Sheffield S1 1WB, S Yorkshire, England

[3] Dhar Mehraz Sci Fac, Dept Phys, Fes, Morocco

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 05期

关键词：

D O I：

10.1063/1.372195

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ballistic electron emission microscopy (BEEM) has been used to investigate the Au/n-ZnSe contact at high voltage. A statistical barrier height value of 1.63 +/- 0.05 eV is obtained. The metal-insulator-semiconductor structure is invoked to explain domains of low electron transmission. Features appear in BEEM spectra at higher voltages and can be attributed to the density of empty states in the semiconductor. Impact ionization effects are observed when the electron kinetic energy exceeds the band-gap energy. (C) 2000 American Institute of Physics. [S0021-8979(00)02104-6].

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页码：2422 / 2426

页数：5

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