The control of growth dynamics by the use of designed precursors for the MOCVD of electronic ceramics Part II

被引：10

作者：

Jones, AC

Leedham, TJ

Wright, PJ

Crosbie, MJ

Williams, DJ

Davies, HO

Fleeting, KA

O'Brien, P

Pemble, ME

机构：

[1] Inorgtech Ltd, Mildenhall IP28 7DE, Suffolk, England

[2] DERA Malvern, Malvern WR14 3PS, Worcs, England

[3] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AY, England

[4] Univ Salford, Dept Chem, Salford M5 4WT, Lancs, England

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 1999年 / 2卷 / 02期

关键词：

D O I：

10.1016/S1369-8001(99)00011-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

MOCVD is increasingly being used for the deposition of ceramics such as Pb(Zr,Ti)O-3, TiO2 and SrBi2Ta2O9 which are important in the fabrication of devices. In order to exploit the full potential of MOCVD the properties of the precursors need to be tailored in order that parameters in the MOCVD process are optimised, In this paper we describe our approach to 'molecular design' and discuss how the substitution of simple alkoxide groups by beta-diketonates or donor-functionalised ligands can result in precursors with improved physical properties and optimum MOCVD characteristics. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：165 / 171

页数：7

共 39 条

[1] Preparation and properties of ferroelectric Bi2SrTa2O9 thin films for FeRAM using flash-MOCVD [J].