Charge carrier mobility in doped disordered organic semiconductors

被引：38

作者：

Arkhipov, VI

Heremans, P

Emelianova, EV

Adriaenssens, GJ

Bässler, H

机构：

[1] IMEC, MCP, B-3001 Heverlee, Belgium

[2] Katholieke Univ Leuven, Semicond Phys Lab, B-3001 Heverlee, Belgium

[3] Univ Marburg, Inst Phys Nucl & Macromol Chem, D-35032 Marburg, Germany

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2004年 / 338卷

关键词：

D O I：

10.1016/j.jnoncrysol.2004.03.051

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A model of hopping charge carrier transport in a doped disordered organic semiconductor is suggested. It is shown that the doping efficiency can be high in such materials even if the activation energy for dopant formation is comparatively large. This result can explain high levels of accidental doping that are often observed in amorphous organic materials. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：603 / 606

页数：4

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