Direct measurement of surface-state conductance by microscopic four-point probe method

被引:52
作者
Hasegawa, S
Shiraki, I
Tanikawa, T
Petersen, CL
Hansen, TM
Boggild, P
Grey, F
机构
[1] Univ Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan
[2] Capres AS, DK-2800 Lyngby, Denmark
[3] Tech Univ Denmark, Mikroelektron Ctr 3, DK-2800 Lyngby, Denmark
关键词
D O I
10.1088/0953-8984/14/35/309
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
For in situ measurements of local electrical conductivity of well defined crystal surfaces in ultrahigh vacuum, we have developed microscopic four-point probes with a probe spacing of several micrometres, installed in a scanning-electron - microscope/electron-diffraction chamber. The probe is precisely positioned on targeted areas of the sample surface by using piezoactuators. This apparatus enables conductivity measurement with extremely high surface sensitivity, resulting in direct access to surface-state conductivity of the surface superstructures, and clarifying the influence of atomic steps upon conductivity.
引用
收藏
页码:8379 / 8392
页数:14
相关论文
共 24 条
[1]   Scanning nanoscale multiprobes for conductivity measurements [J].
Boggild, P ;
Hansen, TM ;
Kuhn, O ;
Grey, F ;
Junno, T ;
Montelius, L .
REVIEW OF SCIENTIFIC INSTRUMENTS, 2000, 71 (07) :2781-2783
[2]  
Boggild P, 2000, ADV MATER, V12, P947, DOI 10.1002/1521-4095(200006)12:13<947::AID-ADMA947>3.0.CO
[3]  
2-7
[4]   The conductivity of thin metallic films according to the electron theory of metals [J].
Fuchs, K .
PROCEEDINGS OF THE CAMBRIDGE PHILOSOPHICAL SOCIETY, 1938, 34 :100-108
[5]   Electrical conduction via surface-state bands [J].
Hasegawa, S ;
Tong, X ;
Jiang, CS ;
Nakajima, Y ;
Nagao, T .
SURFACE SCIENCE, 1997, 386 (1-3) :322-327
[6]   Structures and electronic transport on silicon surfaces [J].
Hasegawa, S ;
Tong, X ;
Takeda, S ;
Sato, N ;
Nagao, T .
PROGRESS IN SURFACE SCIENCE, 1999, 60 (5-8) :89-257
[7]   Surface-state bands on silicon -: Si(111)-√3 x √3-Ag surface superstructure [J].
Hasegawa, S ;
Sato, N ;
Shiraki, I ;
Petersen, CL ;
Boggild, P ;
Hansen, TM ;
Nagao, T ;
Grey, F .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (6B) :3815-3822
[8]   Surface-state bands on silicon as electron systems in reduced dimensions at atomic scales [J].
Hasegawa, S .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2000, 12 (35) :R463-R495
[9]  
HASEGAWA S, 2001, JAPAN SOC APPL PHYS, V70, P1165
[10]   Measurement of surface state conductance using STM point contacts [J].
Hasegawa, Y ;
Lyo, IW ;
Avouris, P .
SURFACE SCIENCE, 1996, 357 (1-3) :32-37