Photochemical functionalization of gallium nitride thin films with molecular and biomolecular layers

被引:68
作者
Kim, Heesuk
Colavita, Paula E.
Metz, Kevin M.
Nichols, Beth M.
Sun, Bin
Uhlrich, John
Wang, Xiaoyu
Kuech, Thomas F.
Hamers, Robert J.
机构
[1] Univ Wisconsin, Dept Chem, Madison, WI 53706 USA
[2] Univ Wisconsin, Dept Chem & Biol Engn, Madison, WI 53706 USA
关键词
VAPOR-PHASE EPITAXY; SURFACE FUNCTIONALIZATION; DIAMOND SURFACES; ALKYL MONOLAYERS; GAN SURFACES; SILICON; HYDROSILYLATION; CHEMISORPTION; ADSORPTION; GAAS;
D O I
10.1021/la0610708
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We demonstrate that photochemical functionalization can be used to functionalize and photopattern the surface of gallium nitride crystalline thin films with well- defined molecular and biomolecular layers. GaN (0001) surfaces exposed to a hydrogen plasma will react with organic molecules bearing an alkene ( C=C) group when illuminated with 254 nm light. Using a bifunctional molecule with an alkene group at one end and a protected amine group at the other, this process can be used to link the alkene group to the surface, leaving the protected amine exposed. Using a simple contact mask, we demonstrate the ability to directly pattern the spatial distribution of these protected amine groups on the surface with a lateral resolution of < 12 mu m. After deprotection of the amines, single- stranded DNA oligonucleotides were linked to the surface using a bifunctional cross- linker. Measurements using fluorescently labeled complementary and noncomplementary sequences show that the DNA- modified GaN surfaces exhibit excellent selectivity, while repeated cycles of hybridization and denaturation in urea show good stability. These results demonstrate that photochemical functionalization can be used as an attractive starting point for interfacing molecular and biomolecular systems with GaN and other compound semiconductors.
引用
收藏
页码:8121 / 8126
页数:6
相关论文
共 38 条
[1]   Covalent functionalization for biomolecular recognition on vertically aligned carbon nanofibers [J].
Baker, SE ;
Tse, KY ;
Hindin, E ;
Nichols, BM ;
Clare, TL ;
Hamers, RJ .
CHEMISTRY OF MATERIALS, 2005, 17 (20) :4971-4978
[2]   Chemical functionalization of GaN and AlN surfaces [J].
Baur, B ;
Steinhoff, G ;
Hernando, J ;
Purrucker, O ;
Tanaka, M ;
Nickel, B ;
Stutzmann, M ;
Eickhoff, M .
APPLIED PHYSICS LETTERS, 2005, 87 (26) :1-3
[3]   Electronic structure of H/GaN(0001): An EELS study of Ga-H formation [J].
Bellitto, VJ ;
Thoms, BD ;
Koleske, DD ;
Wickenden, AE ;
Henry, RL .
PHYSICAL REVIEW B, 1999, 60 (07) :4816-4820
[4]   HREELS of H/GaN(0001): evidence for Ga termination [J].
Bellitto, VJ ;
Thoms, BD ;
Koleske, DD ;
Wickenden, AE ;
Henry, RL .
SURFACE SCIENCE, 1999, 430 (1-3) :80-88
[5]   Adsorption of 1-octanethiol on the GaN(0001) surface [J].
Bermudez, VM .
LANGMUIR, 2003, 19 (17) :6813-6819
[6]   Adsorption and photodissociation of 4-haloanilines on GaN(0001) [J].
Bermudez, VM .
SURFACE SCIENCE, 2002, 519 (03) :173-184
[7]   Chemisorption of NH3 on GaN(0001)-(1 x 1) [J].
Bermudez, VM .
CHEMICAL PHYSICS LETTERS, 2000, 317 (3-5) :290-295
[8]   Functionalizing the GaN(0001)-(1x1) surface I. The chemisorption of aniline [J].
Bermudez, VM .
SURFACE SCIENCE, 2002, 499 (2-3) :109-123
[9]   Functionalizing the GaN(0001)-(1x1) surface II. Chemisorption of 3-pyrroline [J].
Bermudez, VM .
SURFACE SCIENCE, 2002, 499 (2-3) :124-134
[10]   Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy [J].
Bridger, PM ;
Bandic, ZZ ;
Piquette, EC ;
McGill, TC .
APPLIED PHYSICS LETTERS, 1999, 74 (23) :3522-3524