Analysis of the nucleation of GaN layers on (0001) sapphire

被引：11

作者：

Degave, F

Ruterana, P

Nouet, G

Je, JH

Kim, CC

机构：

[1] Inst Sci Mat & Rayonnement, UMR 6508 CNRS, CRISMAT, ESCTM, F-14050 Caen, France

[2] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang, South Korea

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 93卷 / 1-3期

关键词：

GaN; MOCVD; TEM; nucleation; three-dimensional islands; relaxation;

D O I：

10.1016/S0921-5107(02)00014-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Low temperature nucleation of GaN on (0001) sapphire is investigated. Depositions were made for 20-180 s at 560 degreesC by metalorganic chemical vapour deposition (MOCVD). It is shown that the shortest deposition times give rise to the formation of crystallites with the sphalerite structure. Subsequently, the density and the size of nucleation islands increase and they start to transform to wurtzite from the interface with the substrate. From the start, the nuclei contain misfit dislocations. Calculations of residual relaxations done on GaN islands for the 60 and the 120 s nucleation layers, respectively, show that the 120 s nucleation is probably more relaxed. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：177 / 180

页数：4

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