Optical and structural differences between RF and DC AlxNy magnetron sputtered films

被引:22
作者
Dumitru, V [1 ]
Morosanu, C [1 ]
Sandu, V [1 ]
Stoica, A [1 ]
机构
[1] Natl Inst Res & Dev Mat, Phys Magurele, Bucharest 76900, Romania
关键词
aluminium nitride; sputtering; films; growth mechanism;
D O I
10.1016/S0040-6090(99)00726-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
AlN films have been deposited by RF (1.78 MHz) and DC reactive magnetron sputtering (argon and nitrogen) on glass substrates at low temperatures (< 150 degrees C) and with 16, 21 and 30% nitrogen ratios. We have found optically and structurally distinguishable characteristics for films (both opaque and transparent), obtained using these two experimental methods. We suggest that these differences are due to plasma effects in the substrate during growth, resulting from the different ionic bombardment rates of the two sputtering modes. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:17 / 20
页数:4
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