Impact of correlated generation of oxide defects on SILC and breakdown distributions

被引：7

作者：

Ielmini, D ^{[1
]}

Spinelli, AS

Lacaita, AL

van Duuren, MJ

机构：

[1] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy

[2] Univ Studi Insubria, Dipartimento Matemat & Fis, I-22100 Como, Italy

[3] Ist Nazl Fis Mat, Unita Como, I-22100 Como, Italy

[4] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy

[5] Philips Res Leuven, B-3001 Louvain, Belgium

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2004年 / 51卷 / 08期

关键词：

dielectric breakdown; Flash memories; leakage currents; reliability modeling;

D O I：

10.1109/TED.2004.831959

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A three-dimensional Monte Carlo model for analysis of the reliability of Flash memory arrays is developed, and applied to thin tunnel oxide (t(ox) = 5 nm) samples. Good agreement between experimental data and simulation results are obtained, assuming a correlated defect generation in the tunnel oxide of our samples as evidenced in [1]. The impact of correlated defect generation on dielectric breakdown is also addressed by means of a percolation model. It is shown that correlated generation provides no significant degradation of the breakdown lifetime with respect to Poisson statistics.

引用

页码：1281 / 1287

页数：7

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