A statistical model for SILC in flash memories

被引：53

作者：

Ielmini, D ^{[1
]}

Spinelli, AS

Lacaita, AL

Modelli, A

机构：

[1] Politecn Milan, Dipartimento Elettr & Informat, I-20133 Milan, Italy

[2] Univ Insubria, Dipartimento Sci Chim Fis & Matemat, I-22100 Como, Italy

[3] Univ Insubria, Ist Nazl Fis Mat, I-22100 Como, Italy

[4] STMicroelect, Cent R&D, I-20041 Agrate Brianza, Italy

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 11期

关键词：

EPROM; leakage currents; reliability modeling;

D O I：

10.1109/TED.2002.804730

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reliability of Flash memories is strongly limited by the stress-induced leakage current (SILC), which leads to accelerated charge-loss phenomena in few anomalous cells. Estimating the reliability of large Flash arrays requires that physically-based models for the statistical distribution of SILC are developed. In this paper, we show a physical model for the leakage mechanism in thin oxides, which is able to explain the anomalous leakage-conduction in tail cells. The physical model is then used for a quantitative evaluation of the SILC distribution in large Flash arrays. The new model can reproduce the statistics of SILC for a wide range of tunnel-oxide thickness, and can provide a straightforward estimation of reliability for large Flash arrays.

引用

页码：1955 / 1961

页数：7

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