A new two-trap tunneling model for the anomalous stress-induced leakage current (SILC) in Flash memories

被引：31

作者：

Ielmini, D

Spinelli, AS

Lacaita, AL

Modelli, A

机构：

[1] Politecn Milan, Dipartimento Elettr & Informat, I-20133 Milan, Italy

[2] Univ Insubria, Dipartimento Sci CCFFMM, I-22100 Como, Italy

[3] INFM, Unita Como, I-22100 Como, Italy

[4] STMicroelect, I-20041 Agrate Brianza, Italy

来源：

MICROELECTRONIC ENGINEERING | 2001年 / 59卷 / 1-4期

关键词：

two-trap tunneling model; stress-induced leakage current; flash cells;

D O I：

10.1016/S0167-9317(01)00621-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present new experimental and numerical results on the leakage current in Flash cells after cycling, showing that two markedly different behaviors can be identified. Most tail cells show a leakage current that can be successfully described by single-trap tunneling. However, the unstable and very high leakage exhibited by a few anomalous cells requires a different explanation. An improved physical model including two-trap tunneling processes can account for the large current enhancement in the anomalous cells, as well as explaining for the first time their asymmetric and erratic behavior. (C) 2001 Published by Elsevier Science B.V.

引用

页码：189 / 195

页数：7

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