Equivalent cell approach for extraction of the SILC distribution in flash EEPROM cells

被引：22

作者：

Ielmini, D ^{[1
]}

Spinelli, AS

Lacaita, AL

Modelli, A

机构：

[1] Politecn Milan, Dipartimento Elettron & Informat, I-20133 Milan, Italy

[2] Univ Insubria, Dipartimento Sci Chim Fis & Matemat, I-22100 Como, Italy

[3] Ist Nazl Fis Mat, I-22100 Como, Italy

[4] STMicroelectronics, Cent R&D, I-20041 Agrate Brianza, Italy

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 01期

关键词：

electrically erasable programmable read only; memory; leakage currents; reliability estimation;

D O I：

10.1109/55.974806

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new method for characterizing the distribution of the stress-induced leakage current (SILC) in Flash memories is presented. The statistics of the leakage parameters is extracted directly from the time dependence of the threshold voltage distributions obtained in a single gate-stress experiment, without any need for tracking the behavior of the individual cells. The new technique can be used for fast evaluation and reliability projections, as well as providing a tool for statistical investigation on the oxide leakage mechanisms.

引用

页码：40 / 42

页数：3

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