Coexistence of planar and three-dimensional quantum dots in CdSe/ZnSe structures

被引：75

作者：

Strassburg, M

Deniozou, T

Hoffmann, A

Heitz, R

Pohl, UW

Bimberg, D

Litvinov, D

Rosenauer, A

Gerthsen, D

Schwedhelm, S

Lischka, K

Schikora, D

机构：

[1] Tech Univ Berlin, Inst Festkorperforsch, D-10623 Berlin, Germany

[2] Univ Karlsruhe, Lab Elektronenmikroskopie, D-76128 Karlsruhe, Germany

[3] Univ Gesamthsch Paderborn, Fachbereich Phys 6, D-33098 Paderborn, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 06期

关键词：

D O I：

10.1063/1.125861

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two well distinguishable classes of nanoscale islands were identified in CdSe/ZnSe quantum dot structures by optical spectroscopy and transmission electron microscopy. For 2.1 to 3.1 monolayer CdSe deposition, coherent three-dimensional (3D) islands, formed in the Stranski-Krastanow (SK) mode, are found with typical diameters of similar to 16 nm and a coverage-dependent density of up to 3x10(10) cm(-2). Simultaneously, small islands with lateral extensions below 10 nm and a density of similar to 5x10(11) cm(-2) are formed by strain-modified island growth. Whereas the 3D SK islands dominate the emission properties at room temperature, the latter smaller islands determine the optical properties at temperatures below 120 K. (C) 2000 American Institute of Physics. [S0003-6951(00)00806-8].

引用

页码：685 / 687

页数：3

共 14 条

[1] Morphology of ultrathin CdSe quantum confinement layers in ZnSe matrices [J].