Three-dimensionally confined excitons in MOCVD-grown ultrathin CdSe depositions in ZnSSe matrix

被引：10

作者：

Engelhardt, R ^{[1
]}

Turck, V

Pohl, UW

Bimberg, D

Veit, P

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Otto Von Guericke Univ, Inst Phys Expt, D-39016 Magdeburg, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 184卷

关键词：

CdSe/ZnSSe; quantum dots; MOCVD; cathodoluminescence;

D O I：

10.1016/S0022-0248(98)80066-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Up to 3 monolayer (ML) thick highly strained CdSe insertions in lattice matched ZnSSe/GaAs were grown by metalorganic chemical vapor deposition (MOCVD). The samples show a bright photoluminescence band near the barrier band edge exhibiting a strong red shift with increasing CdSe deposition. The assignment to recombinations of three-dimensionally confined excitons is confirmed by cathodoluminescence. An additional-low energy band appearing for thicker CdSe depositions is attributed to defects. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：311 / 314

页数：4

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