Stress-induced polarization-graded ferroelectrics

被引:43
作者
Mantese, JV [1 ]
Schubring, NW
Micheli, AL
Thompson, MP
Naik, R
Auner, GW
Misirlioglu, IB
Alpay, SP
机构
[1] Delphi Res Labs, Shelby Township, MI 48315 USA
[2] Wayne State Univ, Dept Phys & Astron, Detroit, MI 48202 USA
[3] Wayne State Univ, Dept Elect & Comp Engn, Detroit, MI 48202 USA
[4] Univ Connecticut, Dept Met & Mat Engn, Storrs, CT 06269 USA
[5] Univ Connecticut, Inst Sci Mat, Storrs, CT 06269 USA
关键词
D O I
10.1063/1.1498506
中图分类号
O59 [应用物理学];
学科分类号
摘要
Polarization-graded ferroelectrics and their electrically active embodiments, graded ferroelectric devices and transpacitors, have been formed from a variety of material systems, both by grading the composition of the ferroelectric and by imposing temperature gradients normal to the electrode surfaces. In this letter, we show how these same devices can be formed from homogeneous ferroelectric films of lead strontium titanate by imposing stress gradients on the material normal to their electrode surfaces. (C) 2002 American Institute of Physics.
引用
收藏
页码:1068 / 1070
页数:3
相关论文
共 17 条
[1]   Structural, dielectric, and ferroelectric properties of compositionally graded (Pb,La)TiO3 thin films with conductive LaNiO3 bottom electrodes [J].
Bao, DH ;
Mizutani, N ;
Yao, X ;
Zhang, LY .
APPLIED PHYSICS LETTERS, 2000, 77 (07) :1041-1043
[2]   Dielectric enhancement and ferroelectric anomaly of compositionally graded (Pb, Ca)TiO3 thin films derived by a modified sol-gel technique [J].
Bao, DH ;
Yao, X ;
Zhang, LY .
APPLIED PHYSICS LETTERS, 2000, 76 (19) :2779-2781
[3]   Ferroelectric properties of Pb1-3y/2Lay(Zr0.4Ti0.6)O3 structures with La concentration gradients [J].
Boerasu, I ;
Pintilie, L ;
Kosec, M .
APPLIED PHYSICS LETTERS, 2000, 77 (14) :2231-2233
[4]   Unconventional hysteresis behavior in compositionally graded Pb(Zr,Ti)O3 thin films [J].
Brazier, M ;
McElfresh, M ;
Mansour, S .
APPLIED PHYSICS LETTERS, 1998, 72 (09) :1121-+
[5]   Graded PZT thin film capacitors with stoichimetric variation by MOD technique [J].
Chen, Z ;
Arita, K ;
Lim, M ;
De Araujo, CAP .
INTEGRATED FERROELECTRICS, 1999, 24 (1-4) :181-188
[6]   Origin of the "up," "down" hysteresis offsets observed from polarization-graded ferroelectric materials [J].
Fellberg, W ;
Mantese, J ;
Schubring, N ;
Micheli, A .
APPLIED PHYSICS LETTERS, 2001, 78 (04) :524-526
[7]  
GERE JM, 1990, MECH MATER, P272
[8]  
JONA F, 1962, FERROELECTRIC CRYSTA, P15
[9]   FERROELECTRIC THIN-FILMS WITH POLARIZATION GRADIENTS NORMAL TO THE GROWTH SURFACE [J].
MANTESE, JV ;
SCHUBRING, NW ;
MICHELI, AL ;
CATALAN, AB .
APPLIED PHYSICS LETTERS, 1995, 67 (05) :721-723
[10]  
Mantese JV, 2001, INTEGR FERROELECTR, V37, P575, DOI 10.1080/10584580108015683