Graded PZT thin film capacitors with stoichimetric variation by MOD technique

被引：35

作者：

Chen, Z ^{[1
]}

Arita, K

Lim, M

De Araujo, CAP

机构：

[1] Univ Colorado, Dept Elect & Comp Engn, Colorado Springs, CO 80933 USA

[2] Panason Technol Inc, Colorado Springs, CO 80918 USA

[3] Symetrix Corp, Colorado Springs, CO 80918 USA

来源：

INTEGRATED FERROELECTRICS | 1999年 / 24卷 / 1-4期

关键词：

ferroelectric; PZT; graded; GFD; MOD;

D O I：

10.1080/10584589908215590

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By tailoring Zr/Ti ratio in Pb(Zr,Ti)O-3 from 45/55 to 75/25, functionally graded PZT thin films were prepared by metal organic decomposition (MOD) technique. P-E hysteresis loops were measured, and polarization was found to shift up or down depending on the direction of the composition gradients of the PZT. This polarization offset was modeled using Poisson's equation in one dimension. Switching charge was also found to be compositional gradient direction dependent.

引用

页码：181 / 188

页数：8

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