Spin-polarised quantum dot light-emitting diodes with high polarisation efficiency at high temperatures

被引：11

作者：

Fathpour, S ^{[1
]}

Holub, M ^{[1
]}

Chakrabarti, S ^{[1
]}

Bhattacharya, P ^{[1
]}

机构：

[1] Univ Michigan, Solid State Elect Lab, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

来源：

ELECTRONICS LETTERS | 2004年 / 40卷 / 11期

关键词：

D O I：

10.1049/el:20040432

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Light-emitting diode heterostructures with 150 run Ga0.95Mn0.05As spin injector layers and In0.4Ga0.6As quantum dot active regions were grown and fabricated into 600 mum diameter mesa-shaped surface-emitting devices. Polarised light at 1.05 mum is observed with an output polarisation efficiency of 30% and record high temperature operation.

引用

页码：694 / 695

页数：2

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