Pseudomorphic In0.52Al0.48As/In0.7Ga0.3As HEMTs with an ultrahigh fT of 562 GHz

被引：285

作者：

Yamashita, Y ^{[1
]}

Endoh, A

Shinohara, K

Hikosaka, K

Matsui, T

Hiyamizu, S

Mimura, T

机构：

[1] Fujitsu Labs Ltd, Kanagawa 2430197, Japan

[2] Commun Res Labs, Tokyo 1840015, Japan

[3] Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 10期

关键词：

cutoff frequency; gate-channel distance; high-electron mobility transistor (HEMT); InAlAs/InGaAs; InP; pseudomorphic; two-step-recessed gate;

D O I：

10.1109/LED.2002.802667

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We fabricated decananometer-gate pseudomorphic In0.52Al0.48As/In0.7Ga0.3As high-electron mobility. transistors (HEMTs) with a very short gate-channel distance. We obtained a cutoff frequency f(T) of 562 GHz for a 25-nm-gate HEMT. This f(T) is the highest value ever reported for any transistor. The ultrahigh f(T) of our HEMT can be explained by an enhanced electron velocity under the gate, which was a result of reducing the gate-channel distance.

引用

页码：573 / 575

页数：3

共 13 条

[1] A NEW METHOD FOR DETERMINING THE FET SMALL-SIGNAL EQUIVALENT-CIRCUIT [J].

DAMBRINE, G ;

CAPPY, A ;

HELIODORE, F ;

PLAYEZ, E .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (07) :1151-1159

[2] Fabrication technology and device performance of sub-50-nm-gate InP-based high electron mobility transistors [J].

Endoh, A ;

Yamashita, Y ;

Shinohara, K ;

Higashiwaki, M ;

Hikosaka, K ;

Mimura, T ;

Hiyamizu, S ;

Matsui, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (2B) :1094-1098

[3]

Endoh A, 2001, IEICE T ELECTRON, VE84C, P1328

[4]

ENDOH A, IN PRESS

[5] 0.05-MU-M-GATE INALAS/INGAAS HIGH-ELECTRON-MOBILITY TRANSISTOR AND REDUCTION OF ITS SHORT-CHANNEL EFFECTS [J].

ENOKI, T ;

TOMIZAWA, M ;

UMEDA, Y ;

ISHII, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (1B) :798-803

[6] 50-NM SELF-ALIGNED-GATE PSEUDOMORPHIC ALINAS GAINAS HIGH ELECTRON-MOBILITY TRANSISTORS [J].

NGUYEN, LD ;

BROWN, AS ;

THOMPSON, MA ;

JELLOIAN, LM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (09) :2007-2014

[7] Extremely high-speed lattice-matched InGaAs/InAlAs high electron mobility transistors with 472 GHz cutoff frequency [J].

Shinohara, K ;

Yamashita, Y ;

Endoh, A ;

Hikosaka, K ;

Matsui, T ;

Mimura, T ;

Hiyamizu, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (4B) :L437-L439

[8] Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency [J].

Shinohara, K ;

Yamashita, Y ;

Endoh, A ;

Hikosaka, K ;

Matsui, T ;

Mimura, T ;

Hiyamizu, S .

IEEE ELECTRON DEVICE LETTERS, 2001, 22 (11) :507-509

[9] 30-nm-gate InP-based lattice-matched high electron mobility transistors with 350 GHz cutoff frequency [J].

Suemitsu, T ;

Ishii, T ;

Yokoyama, H ;

Enoki, T ;

Ishii, Y ;

Tamamura, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (2B) :L154-L156

[10] Improved recessed-gate structure for sub-0.1-μm-gate InP-based high electron mobility transistors [J].

Suemitsu, T ;

Enoki, T ;

Yokoyama, H ;

Ishii, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (3B) :1365-1372

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