Extremely high-speed lattice-matched InGaAs/InAlAs high electron mobility transistors with 472 GHz cutoff frequency

被引：55

作者：

Shinohara, K

Yamashita, Y

Endoh, A

Hikosaka, K

Matsui, T

Mimura, T

Hiyamizu, S

机构：

[1] Commun Res Labs, Tokyo 1848795, Japan

[2] Fujitsu Labs Ltd, Kanagawa 2430197, Japan

[3] Osaka Univ, Grad Sch Engn Sci, Osaka 5608531, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2002年 / 41卷 / 4B期

关键词：

InP; InGaAs/InAlAs; lattice-matched; HEMT; cutoff frequency; gate length; gate-recess;

D O I：

10.1143/JJAP.41.L437

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report extremely high-speed 30-nm-gate InGaAs/InAlAs high electron mobility transistors (HEMTs) lattice-matched to InP substrates with a record cutoff frequency f(t) of 472 GHz. the highest value yet reported for any transistor. The f(t) value exceeds 450 GHz and 400 GHz even for 50-nm-gate and 70-nm-gate devices, respectively. This outstanding performance is attributed to the significantly increased g(m) achieved by reducing the lateral gate-recess length while maintaining a small gate-to-channel separation, which enhances the average electron velocity under the gate.

引用

页码：L437 / L439

页数：3

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