30-nm-gate InAlAs/InGaAs HEMTs lattice-matched to InP substrates

被引：42

作者：

Suemitsu, T ^{[1
]}

Ishii, T ^{[1
]}

Yokoyama, H ^{[1
]}

Umeda, Y ^{[1
]}

Enoki, T ^{[1
]}

Ishii, Y ^{[1
]}

Tamamura, T ^{[1
]}

机构：

[1] NTT, Syst Elect Labs, Atsugi, Kanagawa 2430198, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746339

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report the fabrication and the device characteristics of the InP-based lattice-matched HEMTs with a 30-nm gate, which is the smallest gate yet achieved for InP-based HEMTs. A fullerene-incorporated nanocomposite resist is used in electron beam (EB) lithography to achieve such a small gate. A cutoff frequency of the 30-nm-gate HEMTs is 350 GHz, which is comparable to the reported value for 50-nm-gate InP-based pseudomorphic HEMTs and one of the highest value achieved by any kind of three-terminal electronic device.

引用

页码：223 / 226

页数：4

共 11 条

[1] DC AND MICROWAVE CHARACTERISTICS OF SUB-0.1-MU-M GATE-LENGTH PLANAR-DOPED PSEUDOMORPHIC HEMTS [J].

CHAO, PC ;

SHUR, MS ;

TIBERIO, RC ;

DUH, KHG ;

SMITH, PM ;

BALLINGALL, JM ;

HO, P ;

JABRA, AA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (03) :461-473

[2] 0.05-MU-M-GATE INALAS/INGAAS HIGH-ELECTRON-MOBILITY TRANSISTOR AND REDUCTION OF ITS SHORT-CHANNEL EFFECTS [J].

ENOKI, T ;

TOMIZAWA, M ;

UMEDA, Y ;

ISHII, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (1B) :798-803

[3] Ultrahigh-speed integrated circuits using InP-based HEMTs [J].

Enoki, T ;

Yokoyama, H ;

Umeda, Y ;

Otsuji, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (3B) :1359-1364

[4] ULTRA-SUBMICROMETER-GATE ALGAAS/GAAS HEMTS [J].

HAN, J ;

FERRY, DK ;

NEWMAN, P .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (05) :209-211

[5] HETEROINTERFACE FIELD-EFFECT TRANSISTOR WITH 200 A-LONG GATE [J].

ISHIBASHI, A ;

FUNATO, K ;

MORI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12) :L2382-L2384

[6] Nanocomposite resist system [J].

Ishii, T ;

Nozawa, H ;

Tamamura, T .

APPLIED PHYSICS LETTERS, 1997, 70 (09) :1110-1112

[7] 50-NM SELF-ALIGNED-GATE PSEUDOMORPHIC ALINAS GAINAS HIGH ELECTRON-MOBILITY TRANSISTORS [J].

NGUYEN, LD ;

BROWN, AS ;

THOMPSON, MA ;

JELLOIAN, LM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (09) :2007-2014

[8] QUANTUM WIRE FABRICATION BY E-BEAM ELITHOGRAPHY USING HIGH-RESOLUTION AND HIGH-SENSITIVITY E-BEAM RESIST ZEP-520 [J].

NISHIDA, T ;

NOTOMI, M ;

IGA, R ;

TAMAMURA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992, 31 (12B) :4508-4514

[9] High-aspect-ratio nanometer-pattern fabrication using fullerene-incorporated nanocomposite resists for dry-etching application [J].

Shibata, T ;

Ishii, T ;

Nozawa, H ;

Tamamura, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (12B) :7642-7645

[10] Improved recessed-gate structure for sub-0.1-μm-gate InP-based high electron mobility transistors [J].

Suemitsu, T ;

Enoki, T ;

Yokoyama, H ;

Ishii, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (3B) :1365-1372

← 1 2 →