Excitation of Tm3+ by resonant energy transfer from Si nanocrystals

被引：16

作者：

Watanabe, K

Tamaoka, H

Fujii, M ^{[1
]}

Hayashi, S

机构：

[1] Kobe Univ, Fac Engn, Dept Elect & Elect Engn, Nada Ku, Kobe, Hyogo 6578501, Japan

[2] Kobe Univ, Grad Sch Sci & Technol, Nada Ku, Kobe, Hyogo 6578501, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 07期

关键词：

D O I：

10.1063/1.1503860

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence (PL) properties and PL decay dynamics of SiO2 films containing Si nanocrystals (nc-Si) and Tm3+ were studied. The samples exhibited a broad PL at around 1.5 eV due to the recombination of excitons in nc-Si, and rather sharp PL at 1.58, 0.84, and 0.69 eV corresponding to the intra-4f shell transitions of Tm3+. The correlation between the intensities of nc-Si and Tm3+ related PL was studied as a function of the Tm concentration, the size of nc-Si, and the temperature. It was found that the intensity of Tm3+ related PL depends strongly on the size of nc-Si. At low temperatures, the spectral shape of nc-Si PL was strongly modified by doping Tm. From analysis of the modified spectral shape, a resonant energy transfer from nc-Si to Tm3+ is discussed. (C) 2002 American Institute of Physics.

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页码：4001 / 4006

页数：6

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