Nucleation of cubic GaN/GaAs(001) grown by gas source molecular beam epitaxy with hydrazine

被引：15

作者：

Nikishin, SA ^{[1
]}

Antipov, VG ^{[1
]}

Ruvimov, SS ^{[1
]}

Seryogin, GA ^{[1
]}

Temkin, H ^{[1
]}

机构：

[1] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 21期

关键词：

D O I：

10.1063/1.118018

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth nucleation and evolution of morphology of GaN on (001) GaAs is investigated as a function of the N2H4/Ga flux ratio. The use of hydrazine allows us to reach high flux ratios without causing any damage to the epitaxial layer. Epitaxial GaN is purely cubic but shows growth anisotropy dependent on the flux ratio. GaN layers grown at low flux ratios show three-dimensional nucleation and no preferential island orientation. With higher flux ratios, the nucleation rate increases, the surface becomes smoother, and the growth anisotropy markedly increases. The growth morphology reflects the surface anisotropy of the underlying GaAs substrate. (C) 1996 American Institute of Physics.

引用

页码：3227 / 3229

页数：3

共 11 条

[1] ANTIPOV VG, 1995, SEMICONDUCTORS+, V29, P946
[2] SELECTIVE GROWTH OF ZINCBLENDE, WURTZITE, OR A MIXED-PHASE OF GALLIUM NITRIDE BY MOLECULAR-BEAM EPITAXY
CHENG, TS
JENKINS, LC
HOOPER, SE
FOXON, CT
ORTON, JW
LACKLISON, DE
[J]. APPLIED PHYSICS LETTERS, 1995, 66 (12) : 1509 - 1511
[3] KINETIC SURFACE ROUGHENING IN MOLECULAR-BEAM EPITAXY OF INP
COTTA, MA
HAMM, RA
STALEY, TW
CHU, SNG
HARRIOTT, LR
PANISH, MB
TEMKIN, H
[J]. PHYSICAL REVIEW LETTERS, 1993, 70 (26) : 4106 - 4109
[4] P-TYPE ZINCBLENDE GAN ON GAAS SUBSTRATES
LIN, ME
XUE, G
ZHOU, GL
GREENE, JE
MORKOC, H
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (07) : 932 - 933
[5] McIntosh FG, 1996, APPL PHYS LETT, V68, P40, DOI 10.1063/1.116749
[6] LOW-TEMPERATURE GROWTH OF GAN AND ALN ON GAAS UTILIZING METALORGANICS AND HYDRAZINE
MIZUTA, M
FUJIEDA, S
MATSUMOTO, Y
KAWAMURA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (12): : L945 - L948
[7] LARGE-BAND-GAP SIC, III-V NITRIDE, AND II-VI ZNSE-BASED SEMICONDUCTOR-DEVICE TECHNOLOGIES
MORKOC, H
STRITE, S
GAO, GB
LIN, ME
SVERDLOV, B
BURNS, M
[J]. JOURNAL OF APPLIED PHYSICS, 1994, 76 (03) : 1363 - 1398
[8] EPITAXIAL-GROWTH OF CUBIC AND HEXAGONAL GAN ON GAAS BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
OKUMURA, H
MISAWA, S
YOSHIDA, S
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (09) : 1058 - 1060
[9] AN INVESTIGATION OF THE PROPERTIES OF CUBIC GAN GROWN ON GAAS BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY
STRITE, S
RUAN, J
LI, Z
SALVADOR, A
CHEN, H
SMITH, DJ
CHOYKE, WJ
MORKOC, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (04): : 1924 - 1929
[10] PROGRESS AND PROSPECTS FOR GAN AND THE III-V-NITRIDE SEMICONDUCTORS
STRITE, S
LIN, ME
MORKOC, H
[J]. THIN SOLID FILMS, 1993, 231 (1-2) : 197 - 210

← 1 2 →