Nucleation of cubic GaN/GaAs(001) grown by gas source molecular beam epitaxy with hydrazine

被引:15
作者
Nikishin, SA [1 ]
Antipov, VG [1 ]
Ruvimov, SS [1 ]
Seryogin, GA [1 ]
Temkin, H [1 ]
机构
[1] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA
关键词
D O I
10.1063/1.118018
中图分类号
O59 [应用物理学];
学科分类号
摘要
Growth nucleation and evolution of morphology of GaN on (001) GaAs is investigated as a function of the N2H4/Ga flux ratio. The use of hydrazine allows us to reach high flux ratios without causing any damage to the epitaxial layer. Epitaxial GaN is purely cubic but shows growth anisotropy dependent on the flux ratio. GaN layers grown at low flux ratios show three-dimensional nucleation and no preferential island orientation. With higher flux ratios, the nucleation rate increases, the surface becomes smoother, and the growth anisotropy markedly increases. The growth morphology reflects the surface anisotropy of the underlying GaAs substrate. (C) 1996 American Institute of Physics.
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页码:3227 / 3229
页数:3
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