Epitaxial MgO buffer layers for YBCO thin films on R-plane Al2O3

被引：10

作者：

Hakuraku, Y

Maezono, K

Ueda, H

机构：

[1] Faculty of Engineering, Kagoshima University, Koorimoto

来源：

SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 1996年 / 9卷 / 09期

关键词：

D O I：

10.1088/0953-2048/9/9/011

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

MgO buffer layers were epitaxially grown on R-plane Al2O3 (<1(1)under bar 02>) substrates by rf magnetron sputtering using an Mg metal target for high-T-c superconducting thin films. A c-axis oriented MgO film with a smooth and homogeneous surface was obtained at 350 degrees C in an Ar/O-2 mixture under a total sputtering gas pressure of 0.3 Torr with 4 x 10(-6) Torr O-2 High-T-c superconducting Y1Ba2Cu3O7-x (YBCO) thin films were prepared on Al2O3 substrates with and without an MgO buffer layer by de magnetron sputtering. The YBCO film on Al2O3 with an MgO buffer layer was c-axis orientatied perpendicular to the surface and exhibited zero resistivity at T-c = 80 K. A depth profile of atomic concentration and interdiffusion for YBCO (3000 Angstrom)/MgO (500 Angstrom)/Al2O3 was investigated. No diffusion of any atom was observed in the interfaces.

引用

页码：775 / 778

页数：4

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