New plasma source ion-implantation technique for inner surface modification of materials

Plasma source ion-implantation (PSII) is a non-line-of-sight ion implantation technique for surface modification of materials, but the present technique is only suitable for outer surface modification of targets, not for inner surface modification of targets. In this paper we present a new technique which applies to inner surface implantation. Preliminary experiment results show that this new technique: (1) increases plasma density and uniformity obviously inside the target inner surface; (2) generates a plasma sheath between the inner surface of the target and plasma so as to implant the inner surface of the target effectively; (3) achieves a dose uniformity acceptable for industrial application.