High-efficiency GaInP/GaAs HBT MMIC power amplifier with up to 9 W output power at 10 GHz

被引：8

作者：

Riepe, K

Leier, H

Seiler, U

Marten, A

Sledzik, H

机构：

[1] Daimler-Benz AG, Research Center Ulm

[2] Daimler-Benz Aerospace AG

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1996年 / 6卷 / 01期

关键词：

D O I：

10.1109/75.482059

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Monolithic power amplifiers using adequately ballasted high-efficiency GaInP/GaAs heterojunction bipolar transistors (HBT's) have been designed, fabricated, and tested. A maximum output power of 9 W with a power-added efficiency (PAE) of 42% and peak power-added efficiencies of 45% have been achieved at 10 GHz under critical long pulse conditions (pulse width = 100 mu s, duty cycle = 10%). To our knowledge these results represent the best performance of any GaInP/GaAs HBT MMIC power amplifier considering efficiency, output power, operation frequency, and pulse conditions.

引用

页码：22 / 24

页数：3

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