HIGH-SPEED SELF-ALIGNED GAINP/GAAS HBBTS

被引：13

作者：

LEIER, H ^{[1
]}

MARTEN, A ^{[1
]}

BACHEM, KH ^{[1
]}

PLETSCHEN, W ^{[1
]}

TASKER, P ^{[1
]}

机构：

[1] FRAUNHOFER INST APPL SOLID STATE PHYS,W-7800 FREIBURG,GERMANY

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 10期

关键词：

SEMICONDUCTOR DEVICES AND MATERIALS; MICROWAVE DEVICES; HETEROJUNCTION BIPOLAR TRANSISTORS;

D O I：

10.1049/el:19930580

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High speed selfaligned Ga0.5In0.5P/GaAs hole barrier bipolar transistors (HBBTs) with a 60 nm carbon doped base layer (p = 6.5 x 10(19) cm-3) and a 20 nm undoped GaInP barrier have been fabricated. The devices show maximum small signal current gains around 30, independent of emitter size. A current gain cutoff frequency of f(T) = 95 GHz and power pin cutoff frequency of f(max) = 110 GHz are reported for 1.5 x 10 mum2 and 2 x 1.5 x 10 mum2 devices, respectively. These results represent the best microwave performance yet reported for Ga0.5In0.5 P/GaAs based HBTs.

引用

页码：868 / 870

页数：3

共 7 条

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