Time-resolved photoresponse of a gallium-doped germanium photoconductor using a variable pulse-width terahertz source

被引：29

作者：

Hegmann, FA

Williams, JB

Cole, B

Sherwin, MS ^{[1
]}

Beeman, JW

Haller, EE

机构：

[1] Univ Calif Santa Barbara, Dept Phys, Quantum Inst, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Ctr Terahertz Sci & Technol, Santa Barbara, CA 93106 USA

[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[4] Univ Alberta, Dept Phys, Edmonton, AB T6G 2J1, Canada

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 03期

关键词：

D O I：

10.1063/1.125741

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Picosecond to nanosecond-wide terahertz pulses are used to study the fast photoresponse of a gallium-doped germanium (Ge:Ga) photoconductor operating at 4.2 K. A recombination time of about 2 ns is observed in the time-resolved photoresponse. Laser-activated semiconductor reflection switches are used to "slice" the variable-width terahertz pulses from the quasicontinuous-wave output of a free-electron laser. (C) 2000 American Institute of Physics. [S0003-6951(00)02703-0].

引用

页码：262 / 264

页数：3

共 13 条

[11] GENERATION OF 130-FSEC MIDINFRARED PULSES [J].