Electro-optic modulation in crystal-ion-sliced z-cut LiNbO3 thin films

被引：74

作者：

Ramadan, TA ^{[1
]}

Levy, M ^{[1
]}

Osgood, RM ^{[1
]}

机构：

[1] Columbia Univ, Microelect Sci Labs, New York, NY 10027 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 11期

关键词：

D O I：

10.1063/1.126046

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electro-optic modulation is demonstrated in 10-mu m-thick single-crystal LiNbO3 films obtained by crystal ion slicing. This technique uses ion implantation of single-crystal bulk samples followed by selective etching. The measured electro-optic response of these films is comparable, within experimental error, to that of single-crystal bulk LiNbO3 and is superior to previously reported values for epitaxial polycrystalline thin films. The product of half-wave voltage and modulator length, VpiL, is 8 V cm. Post lift-off annealing is shown to be of key importance in improving the modulator extinction ratio. (C) 2000 American Institute of Physics. [S0003-6951(00)01211-0].

引用

页码：1407 / 1409

页数：3

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