Surface selective deposition of molecular semiconductors for solution-based integration of organic field-effect transistors

被引:96
作者
Minari, Takeo [1 ]
Kano, Masataka [3 ]
Miyadera, Tetsuhiko [4 ]
Wang, Sui-Dong [5 ]
Aoyagi, Yoshinobu [1 ]
Tsukagoshi, Kazuhito [2 ,4 ,6 ]
机构
[1] RIKEN, Wako, Saitama 3510198, Japan
[2] JST, CREST, Kawaguchi, Saitama 3320012, Japan
[3] Dai Nippon Printing Co Ltd, Chiba 2770871, Japan
[4] AIST, Tsukuba, Ibaraki 3058568, Japan
[5] Soochow Univ, FUNSOM, Suzhou 215123, Jiangsu, Peoples R China
[6] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, Japan
关键词
energy consumption; organic field effect transistors; polymers; semiconductor materials; thin films; wetting; HIGH-PERFORMANCE; ELECTRONICS; CIRCUITS; SILICON;
D O I
10.1063/1.3095665
中图分类号
O59 [应用物理学];
学科分类号
摘要
A bottom-up fabrication technique for the preparation of self-organized organic field-effect transistors (OFETs) on flexible plastic substrates is presented. Solution-based self-organization of OFETs is achieved by patterning the insulator surface with solution-wettable and unwettable regions. The proposed method satisfies several important requirements of printable electronics, including reduction in energy consumption, minimization of facilities, and the on-demand use of molecular materials. Self-organized OFETs display an average mobility of 0.53 cm(2)/(V s), on/off ratio of 10(9), and subthreshold slope of 0.18 V/dec, with near-zero and narrowly distributed threshold voltage. An inverter circuit prepared using these devices is demonstrated with high signal gain.
引用
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页数:3
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