共 13 条
Surface selective deposition of molecular semiconductors for solution-based integration of organic field-effect transistors
被引:96
作者:

Minari, Takeo
论文数: 0 引用数: 0
h-index: 0
机构:
RIKEN, Wako, Saitama 3510198, Japan RIKEN, Wako, Saitama 3510198, Japan

Kano, Masataka
论文数: 0 引用数: 0
h-index: 0
机构:
Dai Nippon Printing Co Ltd, Chiba 2770871, Japan RIKEN, Wako, Saitama 3510198, Japan

Miyadera, Tetsuhiko
论文数: 0 引用数: 0
h-index: 0
机构:
AIST, Tsukuba, Ibaraki 3058568, Japan RIKEN, Wako, Saitama 3510198, Japan

Wang, Sui-Dong
论文数: 0 引用数: 0
h-index: 0
机构:
Soochow Univ, FUNSOM, Suzhou 215123, Jiangsu, Peoples R China RIKEN, Wako, Saitama 3510198, Japan

Aoyagi, Yoshinobu
论文数: 0 引用数: 0
h-index: 0
机构:
RIKEN, Wako, Saitama 3510198, Japan RIKEN, Wako, Saitama 3510198, Japan

Tsukagoshi, Kazuhito
论文数: 0 引用数: 0
h-index: 0
机构:
JST, CREST, Kawaguchi, Saitama 3320012, Japan
AIST, Tsukuba, Ibaraki 3058568, Japan
Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, Japan RIKEN, Wako, Saitama 3510198, Japan
机构:
[1] RIKEN, Wako, Saitama 3510198, Japan
[2] JST, CREST, Kawaguchi, Saitama 3320012, Japan
[3] Dai Nippon Printing Co Ltd, Chiba 2770871, Japan
[4] AIST, Tsukuba, Ibaraki 3058568, Japan
[5] Soochow Univ, FUNSOM, Suzhou 215123, Jiangsu, Peoples R China
[6] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, Japan
关键词:
energy consumption;
organic field effect transistors;
polymers;
semiconductor materials;
thin films;
wetting;
HIGH-PERFORMANCE;
ELECTRONICS;
CIRCUITS;
SILICON;
D O I:
10.1063/1.3095665
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
A bottom-up fabrication technique for the preparation of self-organized organic field-effect transistors (OFETs) on flexible plastic substrates is presented. Solution-based self-organization of OFETs is achieved by patterning the insulator surface with solution-wettable and unwettable regions. The proposed method satisfies several important requirements of printable electronics, including reduction in energy consumption, minimization of facilities, and the on-demand use of molecular materials. Self-organized OFETs display an average mobility of 0.53 cm(2)/(V s), on/off ratio of 10(9), and subthreshold slope of 0.18 V/dec, with near-zero and narrowly distributed threshold voltage. An inverter circuit prepared using these devices is demonstrated with high signal gain.
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共 13 条
[1]
Organic polymeric thin-film transistors fabricated by selective dewetting
[J].
Chabinyc, ML
;
Wong, WS
;
Salleo, A
;
Paul, KE
;
Street, RA
.
APPLIED PHYSICS LETTERS,
2002, 81 (22)
:4260-4262

Chabinyc, ML
论文数: 0 引用数: 0
h-index: 0
机构:
Palo Alto Res Ctr, Palo Alto, CA 94304 USA Palo Alto Res Ctr, Palo Alto, CA 94304 USA

Wong, WS
论文数: 0 引用数: 0
h-index: 0
机构:
Palo Alto Res Ctr, Palo Alto, CA 94304 USA Palo Alto Res Ctr, Palo Alto, CA 94304 USA

Salleo, A
论文数: 0 引用数: 0
h-index: 0
机构:
Palo Alto Res Ctr, Palo Alto, CA 94304 USA Palo Alto Res Ctr, Palo Alto, CA 94304 USA

Paul, KE
论文数: 0 引用数: 0
h-index: 0
机构:
Palo Alto Res Ctr, Palo Alto, CA 94304 USA Palo Alto Res Ctr, Palo Alto, CA 94304 USA

Street, RA
论文数: 0 引用数: 0
h-index: 0
机构:
Palo Alto Res Ctr, Palo Alto, CA 94304 USA Palo Alto Res Ctr, Palo Alto, CA 94304 USA
[2]
Highly soluble [1]benzothieno[3,2-b]benzothiophene (BTBT) derivatives for high-performance, solution-processed organic field-effect transistors
[J].
Ebata, Hideaki
;
Izawa, Takafumi
;
Miyazaki, Eigo
;
Takimiya, Kazuo
;
Ikeda, Masaaki
;
Kuwabara, Hirokazu
;
Yui, Tatsuto
.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,
2007, 129 (51)
:15732-+

Ebata, Hideaki
论文数: 0 引用数: 0
h-index: 0
机构:
Hiroshima Univ, Grad Sch Engn, Dept Appl Chem, Higashihiroshima 7398527, Japan Hiroshima Univ, Grad Sch Engn, Dept Appl Chem, Higashihiroshima 7398527, Japan

Izawa, Takafumi
论文数: 0 引用数: 0
h-index: 0
机构:
Hiroshima Univ, Grad Sch Engn, Dept Appl Chem, Higashihiroshima 7398527, Japan Hiroshima Univ, Grad Sch Engn, Dept Appl Chem, Higashihiroshima 7398527, Japan

Miyazaki, Eigo
论文数: 0 引用数: 0
h-index: 0
机构:
Hiroshima Univ, Grad Sch Engn, Dept Appl Chem, Higashihiroshima 7398527, Japan Hiroshima Univ, Grad Sch Engn, Dept Appl Chem, Higashihiroshima 7398527, Japan

论文数: 引用数:
h-index:
机构:

Ikeda, Masaaki
论文数: 0 引用数: 0
h-index: 0
机构: Hiroshima Univ, Grad Sch Engn, Dept Appl Chem, Higashihiroshima 7398527, Japan

Kuwabara, Hirokazu
论文数: 0 引用数: 0
h-index: 0
机构:
Nippon Kayaku Co Ltd, Funct Chem R&D, Tokyo 1158588, Japan Hiroshima Univ, Grad Sch Engn, Dept Appl Chem, Higashihiroshima 7398527, Japan

Yui, Tatsuto
论文数: 0 引用数: 0
h-index: 0
机构:
Nippon Kayaku Co Ltd, Funct Chem R&D, Tokyo 1158588, Japan Hiroshima Univ, Grad Sch Engn, Dept Appl Chem, Higashihiroshima 7398527, Japan
[3]
Organic electronics on paper
[J].
Eder, F
;
Klauk, H
;
Halik, M
;
Zschieschang, U
;
Schmid, G
;
Dehm, C
.
APPLIED PHYSICS LETTERS,
2004, 84 (14)
:2673-2675

Eder, F
论文数: 0 引用数: 0
h-index: 0
机构:
Infineon Technol, New Memory Platforms, Mat & Technol, D-91052 Erlangen, Germany Infineon Technol, New Memory Platforms, Mat & Technol, D-91052 Erlangen, Germany

Klauk, H
论文数: 0 引用数: 0
h-index: 0
机构:
Infineon Technol, New Memory Platforms, Mat & Technol, D-91052 Erlangen, Germany Infineon Technol, New Memory Platforms, Mat & Technol, D-91052 Erlangen, Germany

Halik, M
论文数: 0 引用数: 0
h-index: 0
机构:
Infineon Technol, New Memory Platforms, Mat & Technol, D-91052 Erlangen, Germany Infineon Technol, New Memory Platforms, Mat & Technol, D-91052 Erlangen, Germany

Zschieschang, U
论文数: 0 引用数: 0
h-index: 0
机构:
Infineon Technol, New Memory Platforms, Mat & Technol, D-91052 Erlangen, Germany Infineon Technol, New Memory Platforms, Mat & Technol, D-91052 Erlangen, Germany

Schmid, G
论文数: 0 引用数: 0
h-index: 0
机构:
Infineon Technol, New Memory Platforms, Mat & Technol, D-91052 Erlangen, Germany Infineon Technol, New Memory Platforms, Mat & Technol, D-91052 Erlangen, Germany

Dehm, C
论文数: 0 引用数: 0
h-index: 0
机构:
Infineon Technol, New Memory Platforms, Mat & Technol, D-91052 Erlangen, Germany Infineon Technol, New Memory Platforms, Mat & Technol, D-91052 Erlangen, Germany
[4]
Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits
[J].
Gundlach, D. J.
;
Royer, J. E.
;
Park, S. K.
;
Subramanian, S.
;
Jurchescu, O. D.
;
Hamadani, B. H.
;
Moad, A. J.
;
Kline, R. J.
;
Teague, L. C.
;
Kirillov, O.
;
Richter, C. A.
;
Kushmerick, J. G.
;
Richter, L. J.
;
Parkin, S. R.
;
Jackson, T. N.
;
Anthony, J. E.
.
NATURE MATERIALS,
2008, 7 (03)
:216-221

Gundlach, D. J.
论文数: 0 引用数: 0
h-index: 0
机构:
NIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA NIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA

Royer, J. E.
论文数: 0 引用数: 0
h-index: 0
机构:
NIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA NIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA

Park, S. K.
论文数: 0 引用数: 0
h-index: 0
机构:
Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA NIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA

Subramanian, S.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Kentucky, Dept Chem, Lexington, KY 40506 USA NIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA

Jurchescu, O. D.
论文数: 0 引用数: 0
h-index: 0
机构:
NIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA
Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA NIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA

Hamadani, B. H.
论文数: 0 引用数: 0
h-index: 0
机构:
NIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA NIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA

Moad, A. J.
论文数: 0 引用数: 0
h-index: 0
机构:
Natl Inst Stand & Technol, Chem Sci & Technol Lab, Surface & Microanal Sci Div, Gaithersburg, MD 20899 USA NIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA

Kline, R. J.
论文数: 0 引用数: 0
h-index: 0
机构:
Natl Inst Stand & Technol, Mat Sci & Engn Lab, Div Polymers, Gaithersburg, MD 20899 USA NIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA

Teague, L. C.
论文数: 0 引用数: 0
h-index: 0
机构:
Natl Inst Stand & Technol, Chem Sci & Technol Lab, Surface & Microanal Sci Div, Gaithersburg, MD 20899 USA NIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA

Kirillov, O.
论文数: 0 引用数: 0
h-index: 0
机构:
NIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA NIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA

Richter, C. A.
论文数: 0 引用数: 0
h-index: 0
机构:
NIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA NIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA

Kushmerick, J. G.
论文数: 0 引用数: 0
h-index: 0
机构:
Natl Inst Stand & Technol, Chem Sci & Technol Lab, Surface & Microanal Sci Div, Gaithersburg, MD 20899 USA NIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA

Richter, L. J.
论文数: 0 引用数: 0
h-index: 0
机构:
Natl Inst Stand & Technol, Chem Sci & Technol Lab, Surface & Microanal Sci Div, Gaithersburg, MD 20899 USA NIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA

Parkin, S. R.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Kentucky, Dept Chem, Lexington, KY 40506 USA NIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA

Jackson, T. N.
论文数: 0 引用数: 0
h-index: 0
机构: NIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA

Anthony, J. E.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Kentucky, Dept Chem, Lexington, KY 40506 USA NIST, Div Semicond Elect, Elect & Elect Engn Lab, Gaithersburg, MD 20899 USA
[5]
A stretchable form of single-crystal silicon for high-performance electronics on rubber substrates
[J].
Khang, DY
;
Jiang, HQ
;
Huang, Y
;
Rogers, JA
.
SCIENCE,
2006, 311 (5758)
:208-212

Khang, DY
论文数: 0 引用数: 0
h-index: 0
机构: Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA

Jiang, HQ
论文数: 0 引用数: 0
h-index: 0
机构: Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA

Huang, Y
论文数: 0 引用数: 0
h-index: 0
机构: Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA

Rogers, JA
论文数: 0 引用数: 0
h-index: 0
机构: Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
[6]
Stretchable and foldable silicon integrated circuits
[J].
Kim, Dae-Hyeong
;
Ahn, Jong-Hyun
;
Choi, Won Mook
;
Kim, Hoon-Sik
;
Kim, Tae-Ho
;
Song, Jizhou
;
Huang, Yonggang Y.
;
Liu, Zhuangjian
;
Lu, Chun
;
Rogers, John A.
.
SCIENCE,
2008, 320 (5875)
:507-511

Kim, Dae-Hyeong
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Illinois, Dept Mat Sci & Engn, Beckman Inst, Urbana, IL 61801 USA
Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA Northwestern Univ, Dept Civil & Environm Engn, Evanston, IL 60208 USA

Ahn, Jong-Hyun
论文数: 0 引用数: 0
h-index: 0
机构:
Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea Northwestern Univ, Dept Civil & Environm Engn, Evanston, IL 60208 USA

Choi, Won Mook
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Illinois, Dept Mat Sci & Engn, Beckman Inst, Urbana, IL 61801 USA
Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA Northwestern Univ, Dept Civil & Environm Engn, Evanston, IL 60208 USA

Kim, Hoon-Sik
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Illinois, Dept Mat Sci & Engn, Beckman Inst, Urbana, IL 61801 USA
Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA Northwestern Univ, Dept Civil & Environm Engn, Evanston, IL 60208 USA

Kim, Tae-Ho
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Illinois, Dept Mat Sci & Engn, Beckman Inst, Urbana, IL 61801 USA
Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA Northwestern Univ, Dept Civil & Environm Engn, Evanston, IL 60208 USA

Song, Jizhou
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Illinois, Dept Mech Sci & Engn, Urbana, IL 61801 USA Northwestern Univ, Dept Civil & Environm Engn, Evanston, IL 60208 USA

Huang, Yonggang Y.
论文数: 0 引用数: 0
h-index: 0
机构:
Northwestern Univ, Dept Civil & Environm Engn, Evanston, IL 60208 USA
Northwestern Univ, Dept Mech Engn, Evanston, IL 60208 USA Northwestern Univ, Dept Civil & Environm Engn, Evanston, IL 60208 USA

Liu, Zhuangjian
论文数: 0 引用数: 0
h-index: 0
机构:
Inst High Performance Comp, Singapore 117528, Singapore Northwestern Univ, Dept Civil & Environm Engn, Evanston, IL 60208 USA

Lu, Chun
论文数: 0 引用数: 0
h-index: 0
机构:
Inst High Performance Comp, Singapore 117528, Singapore Northwestern Univ, Dept Civil & Environm Engn, Evanston, IL 60208 USA

Rogers, John A.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Illinois, Dept Mat Sci & Engn, Beckman Inst, Urbana, IL 61801 USA
Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA
Univ Illinois, Dept Mech Sci & Engn, Urbana, IL 61801 USA
Univ Illinois, Dept Chem, Urbana, IL 61801 USA
Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA Northwestern Univ, Dept Civil & Environm Engn, Evanston, IL 60208 USA
[7]
Reducing the contact resistance of bottom-contact pentacene thin-film transistors by employing a MoOx carrier injection layer
[J].
Kumaki, Daisuke
;
Umeda, Tokiyoshi
;
Tokito, Shizuo
.
APPLIED PHYSICS LETTERS,
2008, 92 (01)

Kumaki, Daisuke
论文数: 0 引用数: 0
h-index: 0
机构:
Tokyo Inst Technol, Dept Elect Chem, Midori Ku, Yokohama, Kanagawa 2268502, Japan Tokyo Inst Technol, Dept Elect Chem, Midori Ku, Yokohama, Kanagawa 2268502, Japan

Umeda, Tokiyoshi
论文数: 0 引用数: 0
h-index: 0
机构:
NHK Japan Broadcasting Corp, Tokyo 1578510, Japan Tokyo Inst Technol, Dept Elect Chem, Midori Ku, Yokohama, Kanagawa 2268502, Japan

Tokito, Shizuo
论文数: 0 引用数: 0
h-index: 0
机构:
NHK Japan Broadcasting Corp, Tokyo 1578510, Japan Tokyo Inst Technol, Dept Elect Chem, Midori Ku, Yokohama, Kanagawa 2268502, Japan
[8]
Highly Efficient Patterning of Organic Single-Crystal Transistors from the Solution Phase
[J].
Mannsfeld, Stefan C. B.
;
Sharei, Armon
;
Liu, Shuhong
;
Roberts, Mark E.
;
McCulloch, Iain
;
Heeney, Martin
;
Bao, Zhenan
.
ADVANCED MATERIALS,
2008, 20 (21)
:4044-+

Mannsfeld, Stefan C. B.
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

Sharei, Armon
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

Liu, Shuhong
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

Roberts, Mark E.
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

McCulloch, Iain
论文数: 0 引用数: 0
h-index: 0
机构:
Merck Chem, Southampton S016 7QD, Hants, England Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

Heeney, Martin
论文数: 0 引用数: 0
h-index: 0
机构:
Merck Chem, Southampton S016 7QD, Hants, England Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

Bao, Zhenan
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
[9]
Selective organization of solution-processed organic field-effect transistors
[J].
Minari, Takeo
;
Kano, Masataka
;
Miyadera, Tetsuhiko
;
Wang, Sui-Dong
;
Aoyagi, Yoshinobu
;
Seto, Mari
;
Nemoto, Takashi
;
Isoda, Seiji
;
Tsukagoshi, Kazuhito
.
APPLIED PHYSICS LETTERS,
2008, 92 (17)

Minari, Takeo
论文数: 0 引用数: 0
h-index: 0
机构:
RIKEN, Wako, Saitama 3510198, Japan RIKEN, Wako, Saitama 3510198, Japan

Kano, Masataka
论文数: 0 引用数: 0
h-index: 0
机构:
Dai Nippon Printing Co Ltd, Chiba 2770871, Japan RIKEN, Wako, Saitama 3510198, Japan

Miyadera, Tetsuhiko
论文数: 0 引用数: 0
h-index: 0
机构:
RIKEN, Wako, Saitama 3510198, Japan RIKEN, Wako, Saitama 3510198, Japan

Wang, Sui-Dong
论文数: 0 引用数: 0
h-index: 0
机构:
RIKEN, Wako, Saitama 3510198, Japan RIKEN, Wako, Saitama 3510198, Japan

Aoyagi, Yoshinobu
论文数: 0 引用数: 0
h-index: 0
机构:
RIKEN, Wako, Saitama 3510198, Japan RIKEN, Wako, Saitama 3510198, Japan

Seto, Mari
论文数: 0 引用数: 0
h-index: 0
机构: RIKEN, Wako, Saitama 3510198, Japan

Nemoto, Takashi
论文数: 0 引用数: 0
h-index: 0
机构:
Kyoto Univ, Inst Chem Res, Kyoto 6110011, Japan RIKEN, Wako, Saitama 3510198, Japan

Isoda, Seiji
论文数: 0 引用数: 0
h-index: 0
机构: RIKEN, Wako, Saitama 3510198, Japan

Tsukagoshi, Kazuhito
论文数: 0 引用数: 0
h-index: 0
机构:
RIKEN, Wako, Saitama 3510198, Japan
Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan
AIST, Tsukuba, Ibaraki 3058568, Japan RIKEN, Wako, Saitama 3510198, Japan
[10]
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
[J].
Nomura, K
;
Ohta, H
;
Takagi, A
;
Kamiya, T
;
Hirano, M
;
Hosono, H
.
NATURE,
2004, 432 (7016)
:488-492

Nomura, K
论文数: 0 引用数: 0
h-index: 0
机构: Tokyo Inst Technol, ERATO, SORST, JST,Frontier Collaborat Res Ctr,Midori Ku, Yokohama, Kanagawa, Japan

Ohta, H
论文数: 0 引用数: 0
h-index: 0
机构: Tokyo Inst Technol, ERATO, SORST, JST,Frontier Collaborat Res Ctr,Midori Ku, Yokohama, Kanagawa, Japan

Takagi, A
论文数: 0 引用数: 0
h-index: 0
机构: Tokyo Inst Technol, ERATO, SORST, JST,Frontier Collaborat Res Ctr,Midori Ku, Yokohama, Kanagawa, Japan

Kamiya, T
论文数: 0 引用数: 0
h-index: 0
机构: Tokyo Inst Technol, ERATO, SORST, JST,Frontier Collaborat Res Ctr,Midori Ku, Yokohama, Kanagawa, Japan

Hirano, M
论文数: 0 引用数: 0
h-index: 0
机构: Tokyo Inst Technol, ERATO, SORST, JST,Frontier Collaborat Res Ctr,Midori Ku, Yokohama, Kanagawa, Japan

Hosono, H
论文数: 0 引用数: 0
h-index: 0
机构: Tokyo Inst Technol, ERATO, SORST, JST,Frontier Collaborat Res Ctr,Midori Ku, Yokohama, Kanagawa, Japan