X-ray photoelectron spectroscopy and x-ray diffraction study of the thermal oxide on gallium nitride

被引：222

作者：

Wolter, SD ^{[1
]}

Luther, BP ^{[1
]}

Waltemyer, DL ^{[1
]}

Onneby, C ^{[1
]}

Mohney, SE ^{[1
]}

Molnar, RJ ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 16期

关键词：

D O I：

10.1063/1.118944

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The oxidation of single crystal gallium nitride in dry air has been investigated. X-ray photoelectron spectroscopy (XPS) revealed minimal oxide growth at 450 and 750 degrees C for up to 25 h. However, at 900 degrees C the growth of an oxide approximately 5000 Angstrom thick was observed after 25 h. This oxide was determined to be the monoclinic beta-Ga2O3 using glancing angle x-ray diffraction. XPS spectra of the Ga 3d and Ga 2p core levels indicated peak shifts of 1.2 and 1.3 eV, respectively, from Ga-O to Ga-N bonding. The Ga L3M45M45 core level binding energy was also investigated and beta-Ga2O3 and GaN each presented a characteristic peak shape. (C) 1997 American Institute of Physics.

引用

页码：2156 / 2158

页数：3

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