Transparent amorphous In-Ga-Zn-O thin film as function of various gas flows for TFT applications

被引：36

作者：

Jung, C. H. ^{[1
]}

Kim, D. J. ^{[2
]}

Kang, Y. K. ^{[2
]}

Yoon, D. H. ^{[1
,2
]}

机构：

[1] Sungkyunkwan Univ, SAINT, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 14期

关键词：

Transparent amorphous oxide semiconductor; a-IGZO; Oxide TFTs; OXIDE SEMICONDUCTORS; CARRIER TRANSPORT; TRANSISTORS;

D O I：

10.1016/j.tsf.2009.01.166

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical and optical properties of amorphous indium gallium zinc oxide (a-IGZO) films, which can be used as a channel layer, deposited by radio frequency (rf) magnetron sputtering system at room temperature (RT), were investigated as function of various gas flows. The optical transmittance of films deposited under At, O-2 / Ar + O-2 and O-2 / Ar-4% H-2 + O-2 atmospheres in the visible wavelength was consistently above 90% at a wavelength of 550 nm at all gas flows, although the film deposited under Ar-4% H-2 atmosphere exhibited a transmittance of below 50%. The carrier concentration and mobility of the a-IGZO films fabricated under At and Ar-4% H-2 were observed slight decrease as a function of the flow, respectively. The thin film transistors (TFrs) with an a-IGZO channel deposited under At and Ar-4% H-2 atmosphere exhibited the following good characteristics: Vth of 0.34 V, mu(FE) of 3.6 cm(2) V-1 s(-1), on/off ratio of 10(6), and S value of 0.04 V decade(-1). (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：4078 / 4081

页数：4

共 17 条

[11] High field-effect mobility amorphous InGaZnO transistors with aluminum electrodes [J].