Experimental confirmation of thermal plasma CVD of diamond with liquid feedstock injection model

被引:4
作者
Asmann, M [1 ]
Kolman, D [1 ]
Heberlein, J [1 ]
Pfender, E [1 ]
机构
[1] Univ Minnesota, High Temp Lab, Minneapolis, MN 55455 USA
关键词
diamond CVD; experimental confirmation; liquid precursor; modeling; thermal plasma;
D O I
10.1016/S0925-9635(99)00189-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A three-dimensional model of diamond chemical vapor deposition in a thermal plasma system has been compared with experimental results to confirm the validity of the model in simulating reactor flow patterns and deposit characteristics. Model and experimental cases were tested with the same boundary and operating conditions. Several sets of operating conditions were analyzed to confirm the validity of the model. Trends in the diamond chemical vapor deposition system based on the effects of droplet size, injection probe to substrate offset, the addition of an inert carrier gas, and the differences associated with the use of liquid or gaseous precursor feedstock were investigated. To test the validity of how patterns predicted by the model, a laser strobe video system was used to map droplet trajectories in the reactor. Experimental results were found to support the calculated droplet trajectories and flowlines in the reactor. Deposition characteristics such as the mass deposition rate and the area of deposit were examined in the model and experimental cases. General trends, with respect to deposition characteristics, produced by altering the operating conditions in the experiment, and respectively the boundary conditions in the model were found to be similar. Differences between model and experimental results are probably due to the use of an overly simplified surface chemistry model, which does not take into account graphite deposition. In addition, modeling of radial droplet injection does not take into account non-radial perturbations. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:13 / 21
页数:9
相关论文
共 17 条
[1]  
ASMANN M, 1997, P 13 INT S PLASM CHE, V13, P1206
[2]   CHARACTERIZATION OF DIAMOND FILMS DEPOSITED USING C3H6OX-H2 GAS-MIXTURES [J].
CHEN, CF ;
CHEN, SH ;
HONG, TM ;
WU, SH .
DIAMOND AND RELATED MATERIALS, 1993, 2 (5-7) :732-736
[3]  
HAMMERSTRAND C, 1993, ANAL DROPLET SIZING
[4]  
Han Q Y, 1991, P 2 INT S DIAM MAT, V91, P115
[5]  
HEBERLEIN J, 1993, MATER SCI FORUM, V140, P477
[6]   SYNTHESIS OF DIAMOND THIN-FILMS BY THERMAL CVD USING ORGANIC-COMPOUNDS [J].
HIROSE, Y ;
TERASAWA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (06) :L519-L521
[7]   LOW-TEMPERATURE DIAMOND GROWTH IN A MICROWAVE-DISCHARGE [J].
HSU, WL ;
TUNG, DM ;
FUCHS, EA ;
MCCARTY, KF ;
JOSHI, A ;
NIMMAGADDA, R .
APPLIED PHYSICS LETTERS, 1989, 55 (26) :2739-2741
[8]  
Humphreys TP, 1996, MATER RES SOC SYMP P, V416, P133
[9]   A three-dimensional two-phase model for thermal plasma chemical vapor deposition with liquid feedstock injection [J].
Kolman, D ;
Heberlein, J ;
Pfender, E .
PLASMA CHEMISTRY AND PLASMA PROCESSING, 1998, 18 (01) :73-89
[10]   Influence of deposition parameters on diamond thermal plasma chemical vapor deposition with liquid feedstock injection [J].
Kolman, D ;
Heberlein, J ;
Pfender, E .
DIAMOND AND RELATED MATERIALS, 1998, 7 (06) :794-801